XN0111300L Discrete Semiconductor Products |
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Allicdata Part #: | XN0111300LTR-ND |
Manufacturer Part#: |
XN0111300L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP MINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | XN0111300L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The XN0111300L is a pre-biased array of transistors, specifically bipolar junction transistors (BJT). As an array, the XN0111300L contains multiple BJT transistors grouped together in a reduced-size package. This array device is primarily used for enhancing gain and speed in circuits, as well as for amplifying signals. Its reduced size makes it ideal for applications requiring short circuit protection, such as automotive electronics.
The pre-biased array feature found in the XN0111300L means that there is already a forward bias voltage applied to each of the transistors within the array. This forward voltage activates the base-emitter diode, allowing current flow and transistor switching time to be increased. As a result, the XN0111300L offers multiple benefits, including gain and speed improvement, higher output power, and improved noise performance.
The XN0111300L is primarily used in audio applications, such as audio amplifiers. The array’s ability to increase power and improve speed is ideal for these types of circuits, and as a result, it is increasingly being used in high-end audio electronics. Moreover, the reduced-size package of this device proves beneficial for reducing circuit board space and cost. In addition, it is also used for digital signal processing circuits, where its short circuit protection feature is particularly helpful.
The working principle of the XN0111300L is based on two basic components, the collector and the base. The forward bias voltage applied to the transistors in the array energizes the base-emitter diode of each transistor. This, in turn, allows the current to flow and transistor switching to occur. As the current flows through the collector and the base, it is amplified, resulting in an increased voltage at the collector.
The XN0111300L is designed to work with resistors connected between the base and emitter. In this way, the signal gain and speed is increased, allowing it to be applied in audio, signal processing, and other high-power electrical circuits. Furthermore, these resistors limit the current that flows through the transistor, helping to protect the device from any damage caused by overcurrent.
The XN0111300L is an advanced pre-biased array of transistors that is ideal for audio applications and other high-power circuits. Its pre-biased feature helps enhance gain and speed, while its reduced package size is ideal for space-limited applications. In addition, its internal resistors help protect the device from overcurrent, making it a safe and reliable device for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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