XN0187200L Discrete Semiconductor Products

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The XN0187200L is a first-in-first-out (FIFO) memory array that is used in many applications. It is designed to store and process data, making it ideal for a variety of applications, such as telecommunications, data storage, and some industrial applications. The device is implemented in die-stacked ASIC technology, allowing for a smaller footprint and lower power consumption than older FIFO designs.

The XN0187200L consists of an array of storage cells that are interconnected and capable of storing and recalling up to 16 bits of data. It uses a simple register-based structure to store and recall data at the same rate, making it an ideal choice for applications such as telecommunications that require data to be processed in real-time. The device can also be used for data storage purposes in applications such as data logging, making it possible to store and recall large amounts of data quickly. The device also has three control pins, allowing it to be easily used with popular microcontrollers.

The XN0187200L FIFO memory array is based on a field-effect transistor (FET) technology called Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The MOSFET device consists of a source, a drain and a gate, with different parameters controlling the charge carrier movement between the source and the drain. The gate is used to control the flow of the charge carriers, and depending on the parameter setting, the charge carriers can either be efficiently transferred from the source to the drain or blocked.

The XN0187200L memory array consists of several thousands of these MOSFET devices to form a two-dimensional array. Each cell of the array consists of a FET connected to the source, drain and a control gate. This allows the device to store and recall data bits at the same rate, making it ideal for many applications. The device also has tri-state output pins, allowing users to easily connect the device to external logic devices or other systems.

The XN0187200L’s working principle is very simple. It uses the FET to store and recall data at the same rate by controlling the charge carrier movement between the source and the drain. The device uses an array of MOSFETs to form a two-dimensional array, allowing data bits to be stored and recalled quickly. The device can also be used to store and recall large amounts of data for applications such as data logging.

The XN0187200L FIFO memory array is a great choice for applications that require data processing in real-time or data storage. Its small footprint, low power consumption, and tri-state output pins makes it a great choice for many applications. The device can also be used to store and recall large amounts of data quickly, making it ideal for applications such as data logging. The XN0187200L is a great choice for designers looking for a reliable and efficient FIFO memory array solution.

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