XN0111900L Discrete Semiconductor Products |
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Allicdata Part #: | XN0111900LTR-ND |
Manufacturer Part#: |
XN0111900L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP MINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | XN0111900L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G1 |
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An XN0111900L Application Field and Working Principle is a type of transistor array. It is part of the larger bipolar junction transistor (BJT) family, which is made up of components that work together in electronic circuits to perform gain and switching functions. XN0111900L is a pre-biased transistor array, meaning that the polarities of the transistors are predetermined and can be used without the need for any external polarizing components.
The XN0111900L transistor array experiences two major gains. First, its patented integrated circuit technology allows for a lower production cost than conventional transistor arrays, making it effective for large volume applications. Secondly, the transistor array is designed to reduce noise and potential instabilities that can occur in other bipolar transistors.
XN0111900L also offers a number of features that make it particularly attractive for certain applications. These features include: low saturation voltage, low current consumption, improved environmental toughness, and low noise emission.
As with any other transistor array, XN0111900L consists of multiple p-type and n-type semiconductor elements connected together at their counterparts. When DC current flows through one of the two sections, the current generates electric fields that can be used to perform gain and switching functions.
The working principle of XN0111900L transistor array also involves the application of electric fields to control the current of the array. This current control is achieved by introducing positive bias voltage to the circuit. When a biasing voltage is applied to one of the P-type transistors, it induces electron injection from the n-type transistor, thus making the current flow from the n-type to the p-type transistor.
The use of XN0111900L transistor arrays is not limited to just electronic circuits. It can also be used in optical circuits, medical devices, and various other electrical systems. The advantages of this type of array make it the optimal choice for applications that require fast, efficient and reliable operation.
In conclusion, XN0111900L offers unique advantages in both applications and working principles. Its cost-efficiency, low noise emission, and improved environmental performance make it an attractive choice for many electronic and/or optical applications. Its reliable and fast operation makes it ideal for time-sensitive operations, such as those in aircraft and military systems.
The specific data is subject to PDF, and the above content is for reference
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