XN0111400L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SC-74A, SOT-753
Supplier Device Package:	Mini5-G1

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The XN0111400L, part of the XN011 range of transistors manufactured by the Xian Company, is an array of pre-biased bipolar junction transistors (BJTs) designed for various applications in the field of electronics. This product represents a major advance in the design of BJTs and provides improved functionality and performance compared to traditional BJT designs.The XN0111400L contains 12 pre-biased transistors, each with its own collector, emitter, and base, as well as a common ground for all the transistors. This combination provides improved performance in the form of higher speed switching and improved power handling capabilities when compared to traditional BJT designs. The XN0111400L also features high power dissipation and low on-state resistance. This makes it well-suited for use in high-end circuits and applications where superior performance is required.As with all BJT designs, the working principle of the XN0111400L is based on the idea of charge carriers moving between two electrodes, the collector and the emitter, when biased by a voltage applied across the emitter and base. By controlling the voltage applied to the base, the current flowing between the collector and the emitter can be adjusted. In the case of the XN0111400L, this control is provided by the pre-biased transistors, which provides improved switching speeds and lower on-state resistance than a traditional BJT.The XN0111400L is primarily designed for use in various electronics applications, including power management, communication, automotive, medical, and industrial systems. As mentioned above, its pre-biased transistors provide improved power handling capabilities compared to traditional BJTs, which makes it suitable for use in a wide range of applications. Additionally, its other features, such as high power dissipation and low on-state resistance, make it well-suited for use in high-end complex circuits.The XN0111400L has been designed to be highly reliable and durable, with a wide range of operational temperatures and an operational life of over 10 years. It is also RoHS compliant, providing additional assurance of its quality.In conclusion, the XN0111400L is a highly advanced array of pre-biased BJTs which provides superior performance and quality when compared to traditional BJT designs. Its advanced features make it suitable for a range of applications, from power management to high-end systems. Additionally, its long operational life, combined with its RoSH compliance, provide a high degree of reliability and durability.

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