XN0111000L Allicdata Electronics

XN0111000L Discrete Semiconductor Products

Allicdata Part #:

XN0111000LTR-ND

Manufacturer Part#:

XN0111000L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP MINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: XN0111000L datasheetXN0111000L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: Mini5-G1
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Description

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XN0111000L is an integrated array of 9 pre-biased, NPN transistors. It was created by Fairchild Semiconductor and offers designers the convenience of an array of identical transistors in a single package, reducing circuit board complexity and speeding product development.

XN0111000L offers a number of advantages over discrete transistors. These include reduced power dissipation, higher switching speeds, and increased density, which significantly reduces the number of components required for any given transistor implementation. Additionally, the array configuration simplifies design and improves consistency, which offers higher reliability.

XN0111000L has a wide range of applications, from high power video amplifiers, to more specialized tasks such as driving LED displays. It is also frequently used in multiplexing, which allows for the simultaneous transmission of signals over a single carrier, thus increasing communication efficiency.

The working principle behind XN0111000L is based on the basic transistor configuration. It consists of three layers: the emitter, base, and collector. An incoming current is applied to the base, which in turn controls the current flow between the emitter and collector. This creates a channel between the emitter and collector, which allows current to flow through the transistor, resulting in amplification of the incoming signal.

XN0111000L utilizes this basic transistor configuration to create an array of nine NPN transistors. This transistor array is pre-biased, meaning that the base current is already present, allowing the transistor to quickly switch between the ON and OFF states. This allows for faster switching speeds and improved switching efficiency.

The internal structure of XN0111000L is also optimized for increased power efficiency, which reduces the overall power consumption of the system. Because of this, XN0111000L is especially well-suited for applications where low-power operation is required.

In summary, XN0111000L is an integrated array of nine pre-biased NPN transistors. It has a wide range of application fields, from driving video amplifiers, to multiplexing communication signals. Its pre-biased configuration and optimized internal structure also provides improved switching efficiency and reduced power consumption when compared to discrete transistors.

The specific data is subject to PDF, and the above content is for reference

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