XN0111H00L Allicdata Electronics

XN0111H00L Discrete Semiconductor Products

Allicdata Part #:

XN0111H00LTR-ND

Manufacturer Part#:

XN0111H00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP MINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: XN0111H00L datasheetXN0111H00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: Mini5-G1
Description

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A XN0111H00L array, or extended negative-channel, is a type of transistor array based on a pre-biased dual version of a bipolar junction transistor (BJT) array. It is designed to provide both positive and negative switching signals, and also features low voltage operation, high-speed switching, and reduced overall power consumption. An XN0111H00L array is typically used in applications such as switch mode power supplies, field programmable logic arrays, telecommunications, industrial control systems, and consumer electronics.

The XN0111H00L array is made up of four NPN transistors connected in series, with a common collector connection. The emitter of the first transistor is connected to the base of the second transistor, and the base of the third transistor is connected to the emitter of the fourth transistor. This creates an interdependent chain of transistors, with the fourth transistor driving the common collector connection.

The XN0111H00L array has two outputs, one positive and one negative, each being connected to two separate collectors. The positive output is generated by the first and third transistors, and the negative output is created by the second and fourth transistors. When the base current applied to the array is greater than the current needed to sustain the base-emitter junction of a single transistor, the circuit is triggered and the output voltage increases, allowing current to flow from the positive output to the negative output.

The switching speed of the XN0111H00L array is greatly enhanced due to the fact that it is pre-biased. The base-emitter junctions of each of the transistors are already forward-biased, meaning that they require less current to activate than a non-biased array. This also reduces the overall power consumption of the circuit, as less current is required to switch it on and off. Additionally, because the circuit has two distinct outputs, the power dissipated at the positive and negative outputs can be controlled independently, making it suitable for applications where precise power management is required.

The XN0111H00L array has a wide range of applications due to its precise voltage control and low power requirements. It is used in many fields including biomedical engineering, automotive electronics, robotics, and industrial control. In applications such as switch mode power supplies, XN0111H00L transistors are used as switching elements that can rapidly control the voltage and current in the circuit, allowing for precise power regulation and efficiency. In medical equipment, XN0111H00L transistors are used to control and regulate the device’s power supply. In robotics, XN0111H00L transistor arrays are used in complex circuits to control motion and speed. Finally, XN0111H00L transistors are often used in industrial control systems to rapidly switch on and off large loads, as well as to provide precise voltage control.

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