XN0121200L Discrete Semiconductor Products |
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Allicdata Part #: | XN0121200LTR-ND |
Manufacturer Part#: |
XN0121200L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS 2NPN PREBIAS 0.3W MINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | XN0121200L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G1 |
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The XN0121200L is a pre-biased, bipolar (BJT) transistor array. It is typically used in audio amplifier circuits and computer peripheral circuits. It is also used in applications such as high-current or high-voltage switches. This device is designed to be used in the low voltage, high-current applications, and helps to minimize the interference and current dissipation through the circuit.
The XN0121200L is a high-power integrated circuit (IC) whose main function is to amplify signals from the power circuit. It is implemented using a unique two-transistor pre-biased structure. This two-transistor pre-biased structure allows the use of very low power transistors and thus reducing the noise and energy loss of the amplifier circuit. The pre-biased structure helps reduce the need for a separate biasing circuit as the voltage and current are already biased. The XN0121200L has two-stage operation: the first stage is the driver stage where high power is supplied to drive the second stage, the output stage.
The XN0121200L also has a built-in thermal protection feature. This feature allows the device to shut down automatically in case the temperature of the circuit board becomes too high and leads to overheating. This is a very important feature, especially in high-power applications. The XN0121200L also has a low leakage current and an adjustable cut off voltage which greatly increases the efficiency of the circuit. With these features, the XN0121200L is an ideal solution for high-volume, high-reliability applications.
The working principle of the XN0121200L is based on the two-transistor design. The pre-bias voltage is applied to the input of the device before any current is passed through the circuit. In the first stage, the power is passed through the amplifier to the second stage and then to the output. The second stage acts as the current source and is responsible for supplying the current needed to power the output of the device. The current flow is then amplified and the output is fed to the load. The voltage regulation is done by the pre-bias voltage and is controlled by the output voltage of the device.
The XN0121200L is designed to be used in high-current or high-voltage switching and amplifier applications. It is ideal for audio amplifier circuits and computer peripheral circuits. The XN0121200L also provides efficient, low-noise, and high-power operation, making it an ideal solution for many types of applications. Its pre-bias voltage helps to reduce power dissipation and noise, which makes it a very reliable and efficient device. Its two-stage structure also helps to reduce the need for an extra biasing circuit and the adjustable cutoff voltage helps to maximize efficiency.
The specific data is subject to PDF, and the above content is for reference
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