XN0111500L Allicdata Electronics

XN0111500L Discrete Semiconductor Products

Allicdata Part #:

XN0111500LTR-ND

Manufacturer Part#:

XN0111500L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP MINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: XN0111500L datasheetXN0111500L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: Mini5-G1
Description

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XN0111500L is a pre-biased array of heterojunction bipolar transistors (HBTs) integrated into a single package. The device comprises a collection of seven NPN and seven PNP transistors in a dual inline package, pre-biased to operate as a single voltage controlled differential amplifier. The device is designed to meet the requirements of high-speed differential amplification applications and is suitable for use in high sensitivity and low-noise radio frequency (RF) applications.

The XN0111500L is a powerful and versatile integrated circuit designed specifically for pre-biasing and differential amplification. Its design features seven NPN HBTs and seven PNP HBTs housed within a dual inline package. The array is pre-biased by applying a DC voltage to the base of each HBT, providing optimal matching of the collector-base junction capacitance. This bias arrangement results in higher bandwidth and lower noise than can be achieved with a standard differential pair configuration.

The XN0111500L operates as an active differential amplifier with a nominal voltage gain of 20 dB at a sample rate of 40 MHz. This makes it well suited for applications requiring high-speed and low-noise responses such as RF filters, RF receivers and RF energy-harvesting systems. Additionally, the device is also ideal for noise-sensitive applications such as bio-sensing, medical diagnostic and imaging systems.

The XN0111500L is suitable for operation in a wide variety of environments and its low current consumption makes it ideal for applications that require low power consumption. This device is designed to operate between -55°C and +125°C and features high common-mode rejection ratio and high input impedance along with robust temperature stability. Additionally, the device is also radiation tolerant and incorporates a self-examination feature for monitoring electro-thermal parameters.

The XN0111500L is an excellent choice for high-performance pre-biased and differential amplifier applications. Its wide operating temperature range, radiation tolerance and low power consumption makes it ideal for a wide variety of applications in the RF, medical, automotive and industrial spaces.

The specific data is subject to PDF, and the above content is for reference

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