XN0121000L Discrete Semiconductor Products |
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Allicdata Part #: | XN0121000LTR-ND |
Manufacturer Part#: |
XN0121000L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS 2NPN PREBIAS 0.3W MINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | XN0121000L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The XN0121000L is a device from a family of transistors known as Arrays, Pre-Biased Bipolar Junction Transistors (BJT). As its name implies, this type of transistor is designed to provide bias during a given task. This technology is often found in applications where two or more transistors must be operated in tandem, providing an optimal base current when used in combination.
This device can handle up to 1.5A of current and is an encapsulated package type, allowing for a considerable amount of heat dissipation during operation. The XN0121000L features an input of 4.5V, with an operating current of 200 milliamps.
The XN0121000L is commonly used as an amplifier in audio systems. Its three transistor array provides a high-efficiency way of amplifying an audio signal, with minimal distortion and high-power capabilities. It is also commonly used for power switching applications, providing substantial current with relatively little heat generation.
One of the benefits of this transistor array is that it can be pre-biased. Pre-biasing is a process in which one or more of the transistors in an array are biased based on the intended use of the device. This makes the device more efficient, providing more output power while consuming less electricity.
In order to work, the XN0121000L utilizes that principle of the BJT, wherein electrons flow from the emitter to the base, and further to the collector. This process allows for current to pass through the device in a controlled manner, and is the basis for BJT transistors.
The three transistors within the XN0121000L are biased in such a way that current from the base will flow to the collector. This allows for the signal to be amplified with minimal distortion and minimal power dissipation. The bias of the transistors is adjustable, allowing the device to be tuned for optimal performance in a variety of applications.
Additionally, the XN0121000L provides two options for base current adjustment. The first is through a dual-rate adjustment, which allows for two different base currents to be set. The second is through a single-rate adjustment, which allows for a single base current to be set. This offers flexibility in terms of how the device can be tuned for specific applications.
The XN0121000L offers high-efficiency operation in a small form factor. This makes it an ideal choice for a range of audio and power-switching applications. Its pre-biasing capabilities allow for higher power capabilities with less power consumption, making it especially attractive for applications where electricity consumption needs to be kept to a minimum. This device is a great choice for applications where an optimized power delivery and high power capabilities are desired.
The specific data is subject to PDF, and the above content is for reference
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