XN0121400L Discrete Semiconductor Products

XN0121400L Application Field and Working Principle

The XN0121400L is a P-channel, pre-biased, lateral insulated gate field-effect transistor (normally-ON) array, built with advanced Complementary MOS (CMOS) technology, which is suitable for high frequency applications. This product consists of four N-channel, normally-ON transistors and one P-channel, pre-biased, normally-ON transistor.

Features

• TJ = -55 °C to 150 °C
• Low threshold voltages (Vgs)
• Breakdown voltage range of 6 to 18 V
• High breakdown current capability
• Low drain-source on-state resistance (RDS(on))
• High-speed switching capability
• Wide-temperature performance

Applications

The XN0121400L is suitable for use in common emitter, emitter follower and source follower pulse applications such as digital multiplexers, high-speed digital switching circuits, shift registers and edge-trigged flip-flops. Additionally, it is well-suited for applications requiring high-speed switching and is often used in audio power amplifier designs.

Working Principle

The XN0121400L is a combination of four N-channel and one P-channel lateral insulated gate field-effect transistors. The N-channel transistors are built using advanced complementary MOS (CMOS) technology and the P-channel is pre-biased. These transistors have a low threshold voltage (Vgs) and a wide breakdown voltage range of 6 to 18 V. With its high breakdown current capability, it exhibits excellent high-speed switching capabilities.

The product is designed to be used in common emitter, emitter-follower, and source-follower pulse applications, such as digital multiplexers, shift registers, and edge-trigged flip-flops. The XN0121400L provides high-speed switching and low power consumption, allowing it to be used in intensive and energy-conscious applications.

Conclusion

The XN0121400L is an ideal pre-biased P-channel, lateral insulated gate field-effect transistor array for use in high-speed digital applications. With its low threshold voltage, wide breakdown voltage range, and high-speed switching capability, it is well-suited for applications requiring robust performance. Additionally, its low power consumption, high breakdown current capability, and wide-temperature performance make the XN0121400L a good choice for intensive and energy-conscious applications.