XN0111100L Discrete Semiconductor Products |
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Allicdata Part #: | XN0111100LTR-ND |
Manufacturer Part#: |
XN0111100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP MINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | XN0111100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G1 |
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XN0111100L is a type of transistor array that belongs to the category Pre-Biased Bipolar (BJT). It is a two-terminal device that employs a pair of opposite-facing N-channel and P-channel transistors, and it has an integrated diode that connects the two terminals of the device. The pre-biased transistor array works by creating an electric field between the two terminals that switches the N-channel and P-channel transistors between "on" and "off" states. This allows for the instantaneous switching on and off of current, making the device ideal for applications such as audio-frequency amplification, pulse-width modulation, and high-frequency switching.
The XN0111100L device is widely used in applications where both high-current density and fast switching are required. One example is in audio-frequency amplifiers. The XN0111100L features low on-resistance and can offer extremely high switching speeds, allowing for better audio-frequency performance. By using the pre-bias feature of the XN0111100L, the amplifier can be optimized for improved performance. In addition, the device also has a low noise level and high-impedance input, making it an excellent choice for high-end audio applications.
The XN0111100L is also widely used in pulse-width modulation devices, where it is used to switch current in a fast and precise manner. The pre-bias feature of the device enables it to switch between on and off states, ensuring accurate and consistent output. In addition, the device\'s low on-resistance makes it ideal for applications where high levels of current are necessary. This makes the device an ideal choice for automotive and other high-power applications.
Another application for the XN0111100L is in high-frequency switching. The pre-bias feature makes the device capable of providing very fast switching speeds, which is ideal for applications that require precise timing. The device can also achieve exceptionally low noise levels, which makes it suitable for use in sensitive applications such as medical devices. In addition, the device can handle high levels of current and withstand extreme temperatures, making it suitable for use in many industrial applications.
The XN0111100L is a versatile transistor array that is suitable for a wide range of applications. Its pre-bias feature and low on-resistance make it ideal for audio-frequency amplifiers, pulse-width modulation devices, and high-frequency switching. In addition, the device is capable of handling high levels of current, making it suitable for automotive and other high-power applications. Finally, its low noise level and high-impedance input make it an excellent choice for high-end audio and medical applications.
The specific data is subject to PDF, and the above content is for reference
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