XN0111600L Discrete Semiconductor Products |
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Allicdata Part #: | XN0111600LTR-ND |
Manufacturer Part#: |
XN0111600L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP MINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | XN0111600L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G1 |
Description
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XN0111600L is an array of pre-biased small signal transistors, which is widely used in the current market. It is designed primarily for operation in audio and low frequency applications. XN0111600L utilizes a combination of two or more bipolar junction transistors (BJT) to provide high voltage, current density, and high linearity in a single package. The XN0111600L includes a wide variety of products, with different characteristics such as max voltage (VCE), max current (Ic), breakdown voltage (BV), leakage current (forward/reverse), power dissipation (PD), etc. Each device may also have its own specific features, such as switching time, emission class, VBE control, switch times, etc. The XN0111600L offers many advantages over other similar products, such as improved reliability, lower power consumption, higher linearity and improved transient characteristics. The device is suitable for use in various applications, including audio, video, base station power amplifiers, power supply controllers and switching circuits. The XN0111600L operates by using a combination of bipolar junction transistors (BJT) to drive and control current in each transistor. The transistors are connected in series, which allows current to flow in one direction. The current flow is regulated by controlling the base-emitter voltage (VBE) of each transistor. The VBE is controlled by a bias voltage applied to the transistor’s emitter, which increases or decreases the current flow.The XN0111600L also has the ability to handle large current events, such as load transients, by using the control voltage to control the current. The device is also suited for high speed switching applications, as it can operate at speeds of up to 300ns. Additionally, the XN0111600L can be used in audio applications with low crossover distortion, since the current it can supply is independent of the load. The XN0111600L is designed for wide temperature range operation and can withstand temperatures up to +125℃. It also has a wide operating voltage range of 1V to 20V, allowing it to be used in a variety of applications. In summary, XN0111600L is a versatile array of pre-biased small signal transistors used for various audio and low frequency applications. It features high voltage, current density and linearity, and improved reliability and transient characteristics compared to similar products. The device is suitable for use in a wide range of applications, including audio, video, base station power amplifiers and power supply controllers. The XN0111600L operates by using a combination of bipolar junction transistors to drive and control current, and can handle a variety of current events with its control voltage. It is also suitable for use in high speed switching applications and can withstand temperatures up to +125℃. The XN0111600L is a great choice for audio applications with low crossover distortion.The specific data is subject to PDF, and the above content is for reference
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