ZXTN2007GTA Allicdata Electronics

ZXTN2007GTA Discrete Semiconductor Products

Allicdata Part #:

ZXTN2007GTR-ND

Manufacturer Part#:

ZXTN2007GTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 30V 7A SOT223
More Detail: Bipolar (BJT) Transistor NPN 30V 7A 140MHz 3W Surf...
DataSheet: ZXTN2007GTA datasheetZXTN2007GTA Datasheet/PDF
Quantity: 2000
Stock 2000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 300mA, 6.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 3W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: ZXTN2007
Description

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The ZXTN2007GTA is a single bipolar junction transistor (BJT). It is specifically designed for use in a wide variety of different applications, ranging from automotive electrical systems to digital logic circuits. These transistors are known for their high efficiency, low on-resistance, and low noise.

The ZXTN2007GTA features a P-N-P structure, which means it has two P-type base regions, a N-type collector, and an N-type emitter. This gives it three terminals: a base, a collector, and an emitter. When a forward bias is applied to the base-emitter junction, current flows from the collector to the emitter. The magnitude of the current flow is controlled by the voltage across the base-emitter junction.

The ZXTN2007GTA has a maximum collector-emitter voltage (Vce) of 30V and a maximum collector-base voltage (Vcb) of 45V. Its collector current (Ic) can go up to 120mA, and its gain (hfe) is typically 120. Its switching speed is quite fast, with a fall time (tf) of typically 1.5 ns and a rise time (tr) of typically 0.7 ns.

The ZXTN2007GTA is a popular choice for automotive electrical systems. It can be used as a power switch, controlling the on/off state of an electric circuit. It can also be used as a driver circuit, amplifying the output of a switch or sensor, or to provide isolation between the input and output of a circuit.

In addition to automotive applications, the ZXTN2007GTA is also commonly used in digital logic circuits. This is because it has a high gain and low noise levels, which make it ideal for switching signals and low-power digital logic. It can be used in gate and logic circuits, level shifters, and voltage regulators.

The working principle of the ZXTN2007GTA is based on the principles of a bipolar junction transistor. When a voltage is applied between the base and the emitter, current flows from the collector to the emitter. This current is controlled by the voltage applied to the base-emitter junction. By controlling the voltage, the transistor can be used to switch, amplify, or isolate signals.

The ZXTN2007GTA is a versatile and reliable single bipolar junction transistor that can be used in a variety of applications. It is especially popular in automotive electrical systems and digital logic circuits, due to its fast switching speed, high gain, and low noise levels.

The specific data is subject to PDF, and the above content is for reference

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