ZXTN25012EZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN25012EZTR-ND |
Manufacturer Part#: |
ZXTN25012EZTA |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 12V 6.5A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 12V 6.5A 260MHz 2.4W ... |
DataSheet: | ZXTN25012EZTA Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.15315 |
2000 +: | $ 0.13964 |
5000 +: | $ 0.13063 |
10000 +: | $ 0.12162 |
25000 +: | $ 0.11532 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 6.5A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 270mV @ 130mA, 6.5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 10mA, 2V |
Power - Max: | 2.4W |
Frequency - Transition: | 260MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZXTN25012E |
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ZXTN25012EZTA is a general-purpose, single-order, high-performance bipolar junction transistor (BJT). It is ideal for applications requiring high output power or high input/output impedance matching. This device features low breakdown voltage, high maximum collector current, low noise, and fast switching speed. It is sometimes referred to as a NPN BJT or NPN transistor.
The ZXTN25012EZTA is typically used as a simple switch or amplifier. It can be configured in either common emitter or common collector circuit. In a common emitter circuit, the base is connected to a voltage source, the collector is connected to the load, and the emitter is connected to ground. The base current controls the current flowing through the transistor and the collector-emitter voltage. In a common collector circuit, the base is connected to the load and the voltage source is connected to the collector. Current flows from the base to the collector and causes current through the load.
The ZXTN25012EZTA can be used in a variety of applications, such as audio power amplifiers, radio frequency amplifiers, and switching circuits. In audio power amplifiers, the device can be used to amplify audio signals. In radio frequency amplifiers, the ZXTN25012EZTA can provide high gain and low noise figure. In switching circuits, its high input/output impedance matching makes it ideal for driving circuits.
In addition to its use as an amplifier or switch, the ZXTN25012EZTA can also be used as an oscillator. The base-emitter delay is shorter than that of the PNP BJT, making it ideal for oscillation. It can be used in voltage-controlled oscillators (VCO) or frequency synthesizers. As an oscillator, it can generate sinusoidal or rectangular signals, depending on the circuit configuration.
The working principle of the ZXTN25012EZTA is simple. When the base is given a current, a current is allowed to flow between the emitter and collector, resulting in a voltage difference between the collector and emitter. The quantity of current flowing through the transistor is controlled by the amount of base current. This current is proportional to the voltage applied to the base, and thus can be used to control the collector current.
The ZXTN25012EZTA is a versatile single-order, high-performance bipolar junction transistor that can be used in a variety of applications. It is ideal for applications requiring high output power, low noise, and fast switching speed. Its design makes it an ideal choice for use in audio power amplifiers, radio frequency amplifiers, switching circuits, and voltage-controlled oscillators. The device’s working principle is simple and relies on the base current controlling the current flow between the emitter and collector, resulting in an adjustable voltage difference between the collector and emitter.
The specific data is subject to PDF, and the above content is for reference
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