ZXTN25100DZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN25100DZTR-ND |
Manufacturer Part#: |
ZXTN25100DZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 100V 2.5A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 2.5A 175MHz 2.4W... |
DataSheet: | ZXTN25100DZTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2.5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 345mV @ 250mA, 2.5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 10mA, 2V |
Power - Max: | 2.4W |
Frequency - Transition: | 175MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZXTN25100D |
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ZXTN25100DZTA is a patented, high-speed NPN Si-based bipolar transistor manufactured by STMicroelectronics. It enables lower switching times and enhanced system performance for many high-performance applications. This article will discuss the application field and working principle of the ZXTN25100DZTA.
Application Field
The ZXTN25100DZTA supports a wide range of general-purpose and high-performance applications. It features a high-speed, low-voltage gain block that ensures high reliability and is suitable for demanding high-frequency operating modes. ZXTN25100DZTA provides an excellent solution for high-current switching and amplification applications such as power converters, motor drives, and active filters. Other applications include audio power amplifiers, TV set and remote control receivers, switching power supplies, telecom line drivers, and phase-locked loops to name a few.
Working Principle
The ZXTN25100DZTA is a bipolar junction transistor (BJT) that consists of three layers: the base, the emitter, and the collector. A small electric current entering the base controls a larger electric current between the emitter and the collector. This is known as the transistor\'s gain. The base, emitter, and collector are separated by two doped regions known as p-n junctions, which are referred to as the emitter-base junction EBJ, and base-collector junction BCJ. These regions control the current flow between the emitter and collector. An external voltage, Vce, creates a potential barrier at the base-collector junction, allowing current flow when the voltage exceeds the minimum voltage, Vce(off). As the voltage increases, the base-collector junction becomes more conductive, allowing more current flow. The current across the base-collector junction is proportional to the voltage drop at the base-collector junction, which is known as the gain of the ZXTN25100DZTA.
The ZXTN25100DZTA also features a high-frequency operation due to its low capacitance. Its low capacitance reduces the Miller effect such that the basic switch characteristics of the transistor are maintained even under high-frequency conditions. This ensures that the transistor provides superior high-speed switching as well as high-efficiency operation. Furthermore, the ZXTN25100DZTA has an enhanced current gain that enables the device to handle high-power switching applications.
In summary, the ZXTN25100DZTA is a single NPN-type bipolar junction transistor that features high-speed switching and excellent performance. It has a wide range of applications in power converters, motor drives, audio amplifiers, remote control receivers, and other high-speed circuits. The working principle of the transistor is such that it is driven by a small electric current at its base, resulting in a larger electric current at the emitter-collector junction. The ZXTN25100DZTA also has excellent high-frequency operation due to its low-capacitance, enabling it to handle demanding high-frequency operating modes.
The specific data is subject to PDF, and the above content is for reference
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