ZXTN617MATA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN617MATATR-ND |
Manufacturer Part#: |
ZXTN617MATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 15V 4.5A 3-DFN |
More Detail: | Bipolar (BJT) Transistor NPN 15V 4.5A 120MHz 3W Su... |
DataSheet: | ZXTN617MATA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4.5A |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 280mV @ 50mA, 4.5A |
Current - Collector Cutoff (Max): | 25nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 3A, 2V |
Power - Max: | 3W |
Frequency - Transition: | 120MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-UDFN |
Supplier Device Package: | DFN2020B-3 |
Base Part Number: | ZXTN617MA |
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The ZXTN617MATA is a medium power NPN bipolar transistor manufactured in a leadless miniature surface-mount package. The device has a maximum collector current of 500 mA, making it suitable for a range of applications, including low-end consumer electronics, automotive, and medical electronics. It has a maximum operating frequency of 300 MHz and can handle up to 10 W of power. The ZXTN617MATA is characterized by its low collector-emitter saturation voltage and its wide range of operating temperatures from -55°C to +150°C.
The ZXTN617MATA is a single transistor, which can be used in a variety of applications. In switching circuits, it can be used to amplify or switch signals. It can also be used as an amplifier in audio circuits, or as an audio preamp for preamplifying small signals. In motor control circuits, it can be used to provide pulse-width modulation control. It can be used to control the speed and direction of motors, or to regulate the voltage in a DC power supply.
The working principle of the ZXTN617MATA is relatively simple. The base is connected to a voltage source, which provides an input to the base of the transistor. This input causes a current to flow in the base-collector junction. This current flow, in turn, causes a voltage drop across the emitter-collector junction. This voltage drop causes a current to flow in the emitter-collector circuit, which is then amplified by the transistor. The current flow in the collector is dependent on the voltage applied to the base of the transistor, with higher voltages resulting in higher collector current flow.
The base of the ZXTN617MATA can be biased externally, either through a voltage divider or through a separate current source, to adjust the collector current flow. This allows the device to be used in a wide variety of switching and amplification circuits. The current gain of the transistor, known as its hFE, can be measured at the rated current level with an external circuit, thus providing information about the gain of the device.
The ZXTN617MATA is a widely used NPN bipolar transistor which is suitable for a wide range of applications. It has a low collector-emitter saturation voltage and a wide operating temperature range, making it suitable for use in automotive, consumer electronics and medical instruments. Its operating principle is relatively simple, and it can be used as an amplifier or as a switch in various circuits. Additionally, its current gain can be adjusted depending on the application.
The specific data is subject to PDF, and the above content is for reference
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