ZXTN2011ZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN2011ZTR-ND |
Manufacturer Part#: |
ZXTN2011ZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 100V 4.5A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 4.5A 130MHz 2.1W... |
DataSheet: | ZXTN2011ZTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4.5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 195mV @ 500mA, 5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 2V |
Power - Max: | 2.1W |
Frequency - Transition: | 130MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZXTN2011 |
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The ZXTN2011ZTA is a single bipolar junction transistor (BJT). As a ubiquitous electronic device, transistor has a wide range of applications, and ZXTN2011ZTA is one of its most commonly used models. In order to understand the application field and working principle of ZXTN2011ZTA, this paper will provide a detailed introduction.
ZXTN2011ZTA is a PNP bipolar junction transistor, and it is widely used in the industries of communication, instrumentation, control, power and switching. The transistor’s maximum collector current ranges between 0.8A - 1.6A, the total power dissipation ranges between 90W-150W, and the maximum junction temperature ranges between 150℃ - 175℃. The operating temperature range of the transistor is from -55℃ - 175℃.
The working principle of ZXTN2011ZTA is based on the principle of a three terminal device. It is composed of three layers of semiconductor material, including the base layer, the emitter layer, and the collector layer.When a small electric current flows through the base layer, the small current will control the larger current that flows through the emitter and collector layer, so that a current transistor operation is achieved. This process is called current amplification.
Another important application of ZXTN2011ZTA is in the field of analog switches. In such a circuit, the transistor can be used to control the continuity of current flow in a circuit. When the base layer of the transistor is in the “on” state, the current flows through the emitter and collector layer and the circuit is said to be closed. When the base layer of the transistor is in the “off” state, then the current will not flow through the emitter and collector layer and the circuit is said to be open and no current will flow.
In summary, ZXTN2011ZTA has a wide range of applications but its main application is as a current amplification transistor in analog and digital circuits, and as an analog switch in circuit switching. It is composed of three layers of semiconductor material, and its working principle is based on current amplification. With the development of technology, ZXTN2011ZTA is able to provide more efficient and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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