ZXTN2005ZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN2005ZTR-ND |
Manufacturer Part#: |
ZXTN2005ZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 25V 5.5A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 5.5A 150MHz 2.1W ... |
DataSheet: | ZXTN2005ZTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5.5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 150mA, 6.5A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1A, 1V |
Power - Max: | 2.1W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZXTN2005 |
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The ZXTN2005ZTA single bipolar junction transistor (BJT) is an essential component in circuits where current and voltage must be regulated. It is commonly used in the power amplification stage of electronic equipment, such as amplifiers, and power supplies. The ZXTN2005ZTA provides reliable switching performance and high power efficiency, and its metal-oxide-semiconductor (MOS) technology offers improved performance over traditional BJT designs.
A bipolar junction transistor is a three-terminal semiconductor device that acts as an electronic switch. Its basic purpose is to gain, regulate, and direct the flow of electrical current between two electronic points. The terminals of a BJT are labeled as collector (C), base (B), and emitter (E), and current flows from the emitter to the collector. The base-emitter junction acts as a diode, which regulates the current flow in the device.
The ZXTN2005ZTA incorporates a N-channel technology, which enables it to directly control the current flow from the collector to the emitter. The N-channel design has improved power efficiency over its predecessor P-channel transistors. The base of the device is reverse biased, which means that the resistor from the transistor output to the base pin is high enough to prevent the transistor from being turned on unintentionally. This improves the reliability of the device.
The ZXTN2005ZTA has a relatively large input capacitance, which allows it to store energy and regulate voltage. The on-state resistance is also very low, which allows the device to accurately regulate current with minimal losses. The device has a high operating temperature range (from - 55 °C to 150 °C) and a high insulation capacity, which makes it suitable for use in high-temperature applications.
The ZXTN2005ZTA is designed to be driven by an external current source, such as a power switch. To turn on the device, a positive voltage is applied to the base. This causes a current to flow from the collector to the emitter, which switches the device on. Once the device is on, the current will flow from the emitter to the collector, which will maintain the on-state of the device.
The ZXTN2005ZTA is versatile and can be used in various applications, such as power supplies, amplifiers, signal processing, and switching circuits. It is also used in automotive and industrial electronics, as well as in medical equipment. The device is designed for use in low-voltage and low-power applications and is suited for use in both AC and DC circuits.
The ZXTN2005ZTA is an ideal choice for applications requiring fast response times, low power consumption, and reliable switching performance. It offers improved performance over traditional BJT designs, making it an ideal choice for a wide range of applications. The device is reliable, efficient, and has a high operating temperature range, making it an ideal solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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