ZXTN2010ZQTA Allicdata Electronics
Allicdata Part #:

ZXTN2010ZQTA-ND

Manufacturer Part#:

ZXTN2010ZQTA

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: PWR LOW SAT TRANSISTOR SOT89 T&R
More Detail: Bipolar (BJT) Transistor NPN 60V 5A 130MHz 2.1W Su...
DataSheet: ZXTN2010ZQTA datasheetZXTN2010ZQTA Datasheet/PDF
Quantity: 1000
1 +: $ 0.35000
10 +: $ 0.33950
100 +: $ 0.33250
1000 +: $ 0.32550
10000 +: $ 0.31500
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Series: Automotive, AEC-Q101
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 230mV @ 300mA, 6A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 2.1W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Description

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The ZXTN2010ZQTA is a single bipolar junction transistor (BJT) that has been designed to be used primarily in low-power applications. This type of transistor is also known as a NPN BJT, and is a three-terminal semiconductor device that is capable of amplification and switching. It has a variety of applications ranging from simple switching operations to providing amplifying and regulating functions.

The ZXTN2010ZQTA has a maximum collector-to-emitter voltage of 100V and a maximum collector current of 2A. It is typically used as a switch, where it can be used to turn a small current on an off, opening and closing a circuit. It is also used for amplification, where it can be used to increase the power of a signal, or to reduce the noise in a signal. It can also be used in regulating circuits, where it can be used to adjust the power and voltage of a device or circuit.

The ZXTN2010ZQTA transistor works by creating a space charge layer between the base and collector terminals. When a voltage is applied to the base, electrons flow from the emitter to the collector, creating a current across the transistor. This current can be varied by adjusting the base current, allowing the transistor to be used as a switch or amplifier.

The ZXTN2010ZQTA is also available in a wide range of packages, from miniature surface mount to through-hole packages. This makes it suitable for use in a variety of applications, from small electronic devices to larger circuits. It is relatively easy to use and is a reliable transistor for many applications.

In conclusion, the ZXTN2010ZQTA is a single bipolar junction transistor that is designed for use in low-power applications. It can be used for a range of functions, from switching to amplification and regulation. It has a maximum collector-to-emitter voltage of 100V and a maximum collector current of 2A. It is also available in a wide range of packages, making it suitable for use in a variety of applications. As such, the ZXTN2010ZQTA is an effective and reliable transistor for many applications.

The specific data is subject to PDF, and the above content is for reference

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