ZXTN2018FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTN2018FTR-ND |
Manufacturer Part#: |
ZXTN2018FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 5A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 5A 130MHz 1.2W Su... |
DataSheet: | ZXTN2018FTA Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 210mV @ 300mA, 6A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 1V |
Power - Max: | 1.2W |
Frequency - Transition: | 130MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | ZXTN2018 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
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ZXTN2018FTA is a commonly used single bipolar junction transistor (BJT). It is a type of active semiconductor device, which controls and amplifies electrical current signals. BJTs are commonly used as amplifiers, switches, or and as comparators.
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The ZXTN2018FTA consists of a three-layer semiconductor: the base, collector and emitter. The base layer contains few free electrons, while the collector and emitter layers contain many. Applying a voltage to the base-collector junction causes one of the electrons to be drawn across the junction, thereby forming a conductive path between the two. When a voltage is applied to the base-emitter junction, the electron is pulled across the junction, forming a conductive path between the emitter and collector.
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The ZXTN2018FTA is widely used in amplifier and switch applications due to its capabilities in controlling current flow. Amplifier applications use the transistor to increase the strength of the input signal. Switch applications use the ZXTN2018FTA to control the supply voltage or to switch between states.
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The ZXTN2018FTA operates by using a current or voltage applied to the base-collector junction to control the current flowing through the transistor. A voltage applied to the base-emitter junction will cause a current to flow through the transistor, resulting in a change in the current at the collector-emitter junction. The ratio of the output current to the input current is known as the current gain, and is typically specified by the manufacturer.
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The ZXTN2018FTA features a wide range of power ratings, operating frequencies and current gains. The operating temperature range is also an important parameter when considering a device for an application.
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The ZXTN2018FTA application field and working principle are determined by its construction and the semiconductor material from which it is fabricated. Depending on the application, the type of semiconductor material used will influence the device\'s performance parameters, such as maximum voltage, power dissipation, and current gain.
The specific data is subject to PDF, and the above content is for reference
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