ZXTN04120HFFTA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 5mA, 2A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	3000 @ 1A, 5V
Power - Max:	1.5W
Frequency - Transition:	120MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-3 Flat Leads
Supplier Device Package:	SOT-23F
Base Part Number:	ZXTN04120H

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Introduction

The ZXTN04120HFFTA is a N-Channel Field-Effect Transistor (FET) with a high-frequency range of 4-12GHz. This component is used in numerous applications, taking advantage of its high-frequency range, low on-resistance, and fast switching speed. In this article, we will explore the ZXTN04120HFFTA\'s application fields and its working principle.

Application Fields

The ZXTN04120HFFTA is used in a variety of fields, including RF and microwave amplifiers, transmitters, receivers, oscillators, mixers and power amplifiers. Its high-frequency range is particularly useful for applications in wireless communications, such as Wi-Fi, Bluetooth and cellular networks. Its fast switching speed is ideal for applications in digital communications, such as cable modems and set-top boxes.The ZXTN04120HFFTA is also commonly used in vehicle and industrial control applications, due to its minimal on-resistance and high current-handling capability. It is particularly useful in applications requiring switching voltages up to 30 VDC.

Working Principle

The ZXTN04120HFFTA is a field-effect transistor, which works by controlling the current flowing through a semiconductor channel using an electric field. At the heart of this device is a three-terminal source, gate and drain structure.When no voltage is applied to the gate terminal, the FET is in the “off” state, meaning no current flows through it. However, by applying a voltage to the gate terminal, an electric field is created which changes the shape of the semiconductor channel, allowing current to flow between the source and drain.The strength of the electric field created by the gate voltage determines the conductance of the channel. As the gate voltage is increased, the conductance increases, resulting in higher current flow. This can be thought of as controlling the flow of current through the FET using an electric field.

Conclusion

The ZXTN04120HFFTA is a N-Channel Field-Effect Transistor (FET) with a high-frequency range of 4-12GHz. It is used in a variety of fields, including RF and microwave amplifiers, transmitters, receivers, oscillators, mixers and power amplifiers. It also finds applications in vehicle and industrial control.At the heart of the ZXTN04120HFFTA is a three-terminal source, gate and drain structure. Its operation is based on the principle of controlling the current flow through a semiconductor channel using an electric field. This electric field is created when a voltage is applied to the gate terminal. As the gate voltage is increased, the conductance of the channel increases, resulting in higher current flow.

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