Cap alum 47uf 10% 35v axial - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SIE864DF-T1-GE3 TR-ND	SIE864DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Power Dissipation (Max): 5.2W (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (U) Package / Case: 10-PolarPAK (U)	1000 Order	3000+: $0.5683
SIE810DF-T1-GE3 -ND	SIE810DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 10V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (L) Package / Case: 10-PolarPAK (L)	1000 Order	3000+: $1.1948
SIE812DF-T1-GE3 -ND	SIE812DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 20V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (L) Package / Case: 10-PolarPAK (L)	1000 Order	3000+: $1.1948
SIE802DF-T1-GE3 -ND	SIE802DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 23.6A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 15V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (L) Package / Case: 10-PolarPAK (L)	1000 Order	3000+: $1.2816
SIE818DF-T1-GE3 TR-ND	SIE818DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 38V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (L) Package / Case: 10-PolarPAK (L)	1000 Order	3000+: $1.3779
SIE808DF-T1-GE3 -ND	SIE808DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 10V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (L) Package / Case: 10-PolarPAK (L)	1000 Order	3000+: $1.3779
SIE876DF-T1-GE3 TR-ND	SIE876DF-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK (L) Package / Case: 10-PolarPAK (L)	1000 Order	1+: $0
1242-1146-ND	2N7635-GA	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 4A (Tc) (165C) Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	1000 Order	1+: $0
1242-1147-ND	2N7636-GA	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 4A (Tc) (165C) Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	1000 Order	1+: $0
1242-1148-ND	2N7637-GA	GeneSiC Semiconductor	View more Packaging: Tube Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) (165C) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	1000 Order	1+: $0
1242-1149-ND	2N7638-GA	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 8A (Tc) (158C) Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	1000 Order	1+: $0
1242-1150-ND	2N7639-GA	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 15A (Tc) (155C) Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Power Dissipation (Max): 172W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	1000 Order	1+: $0
1242-1151-ND	2N7640-GA	GeneSiC Semiconductor	View more Packaging: Bulk Part Status: Obsolete Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 16A (Tc) (155C) Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-276 Package / Case: TO-276AA	1000 Order	1+: $0
NCV8440STT1G-ND	NCV8440STT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 59V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 1.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 35V Power Dissipation (Max): 1.69W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
NCV8440STT3G-ND	NCV8440STT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 59V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 1.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 35V Power Dissipation (Max): 1.69W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
NIF9N05CLT3GOS- ND	NIF9N05CLT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 59V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V Power Dissipation (Max): 1.69W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
NIF9N05CLT3OS-N D	NIF9N05CLT3	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 52V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V Power Dissipation (Max): 1.69W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
NIF9N05CLT1OSTR -ND	NIF9N05CLT1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 52V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V Power Dissipation (Max): 1.69W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
NIF9N05CLT1GOST R-ND	NIF9N05CLT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 59V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V Power Dissipation (Max): 1.69W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	--
2SK3747-ND	2SK3747	ON Semiconductor	View more Packaging: Tray Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Vgs (Max): 35V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Power Dissipation (Max): 3W (Ta), 50W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PML Package / Case: TO-3P-3 Full Pack	1000 Order	1+: $0
2SK3747-MG8-ND	2SK3747-MG8	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Vgs (Max): 35V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PML Package / Case: TO-3P-3 Full Pack	1000 Order	1+: $0
PMT200EPEAX-ND	PMT200EPEAX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 167 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 822pF @ 35V Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
SI7148DP-T1-GE3 TR-ND	SI7148DP-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 35V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
SI7148DP-T1-E3T R-ND	SI7148DP-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 35V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
SI7812DN-T1-E3T R-ND	SI7812DN-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 35V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	1000 Order	--
SI7812DN-T1-GE3 TR-ND	SI7812DN-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 35V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	1000 Order	--
2SK3747-1EOS-ND	2SK3747-1E	ON Semiconductor	View more Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Vgs (Max): 35V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Power Dissipation (Max): 3W (Ta), 50W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF-3 Package / Case: SC-94	1000 Order	1+: $3.1059 30+: $2.4942 120+: $2.2724 510+: $1.8401 1020+: $1.5519
PMT200EPEX-ND	PMT200EPEX	Nexperia USA Inc.	View more Series: TrenchMOS Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 167 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 822pF @ 35V Power Dissipation (Max): 800mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-73 Package / Case: TO-261-4, TO-261AA	1000 Order	1000+: $0.1601
DMN7022LFG-13-N D	DMN7022LFG-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2737pF @ 35V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	1000 Order	3000+: $0.2149
DMN7022LFG-7DIT R-ND	DMN7022LFG-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2737pF @ 35V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	4000 Order	2000+: $0.2017
DMN7022LFGQ-13- ND	DMN7022LFGQ-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2737pF @ 35V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.2929
DMN7022LFGQ-7-N D	DMN7022LFGQ-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2737pF @ 35V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	1000 Order	2000+: $0.2929
NCV8440ASTT3G-N D	NCV8440ASTT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 59V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 1.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 35V Power Dissipation (Max): 1.69W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	4000+: $0.3043
NCV8440ASTT1GOS TR-ND	NCV8440ASTT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 59V Current - Continuous Drain (Id) @ 25C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 1.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 35V Power Dissipation (Max): 1.69W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	7 Order	--
IPA90R1K2C3XKSA 1-ND	IPA90R1K2C3XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 310A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $1.197 10+: $1.0792 100+: $0.8673 500+: $0.6745 1000+: $0.5589
FDH633605-ND	FDH633605	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial	1000 Order	1+: $0
APTML10UM09R004 T1AG-ND	APTML10UM09R004 T1AG	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 154A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power Dissipation (Max): 480W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	1000 Order	1+: $0
NVMS4816NR2G-ND	NVMS4816NR2G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
CPC3710C-ND	CPC3710C	IXYS Integrated Circuits Division	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	1000 Order	1+: $0
BSS110-ND	BSS110	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	1+: $0

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