SI7812DN-T1-E3

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The SI7812DN-T1-E3 is a n-channel enhancement-mode power MOSFET device, designed for high voltage, low on-state resistance, high speed switching and high current carrying capabilities. This product is designed for the most demanding applications, such as automotive, industrial, telecom, and medical.

The single-ended SI7812DN-T1-E3 is fabricated using a high-vacuum, DMOS process of Silicon Carbide and is offered in three threshold voltage. It provides superior performance in terms of efficiency, speed, and power handling capability compared to traditional silicon FET devices.

The SI7812DN-T1-E3 has a wide range of applications across many different industries. It can be used in motor drives, server power supplies, embedded systems, IoT, LEDs, and DC-DC converters. The device is also ideal for high power applications, such as UPSs, renewable energy, and transportation.

This device has an efficient power management design, with low on-resistance and superior reverse recovery characteristics for more applications, making it suitable for high current, high frequency applications. It is available in a space-saving SOT-223 package, which helps reduce board space in applications.

The SI7812DN-T1-E3 is capable of carrying a continuous current of 9A and is capable of operating at temperatures up to 175°C. It also has an operating gate-source voltage of ±30V. The device also has integrated ESD protection, making it robust and reliable.

The working principle of the SI7812DN-T1-E3 is based on the transfer of electron charge through an electric field. The device is constructed in an arrangement of two MOSFETs in parallel, so that when a voltage is applied to the gate-source of one of the devices, current flows through the device. This current flow is controlled by the gate voltage and is responsible for the device’s switching characteristics.

The SI7812DN-T1-E3 is an ideal device for various applications, due to its low on-resistance, high current carrying capabilities, excellent thermal performance, and superior ESD protection. It is suitable for high-speed switching, high current applications and space-saving designs.

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