SIE818DF-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIE818DF-T1-GE3 is a power MOSFET transistor. It has features like a high break-down voltage, low on-state resistance, and small size. These features make it ideal for applications of electronic circuits where low operating currents are needed and high power dissipation is necessary. It is a single device that can be used in power electronics applications such as switch mode power supplies (SMPS), low drop-out regulators (LDOs), motor drive stage applications, and more. The SIE818DF-T1-GE3 offers a very high voltage rating, making it ideal for high voltage applications and DC-DC converters. It is also an excellent choice for power transistors that require a low on-state resistance and high speed.

The construction of the SIE818DF-T1-GE3 is based on the works of the self-aligned MOSFET (SAM) field effect transistor. This device has a very high voltage rating and low on-state resistance. It is also very quick to turn on and operate, making it ideal for applications where high switching speed is desired. The SIE818DF-T1-GE3 also has a heat transfer layer, allowing for a better thermal management of the device and allowing it to have a better reliability and longer lifetime. The device operates at a gate voltage of 10V and has a drain-source voltage range of 10-30V. It has an output current of up to 15A, a max gate-source voltage of +-20V, and a gate-source on-resistance of only 13mohm.

The working principle of the SIE818DF-T1-GE3 is quite simple. A gate voltage is applied to the device and a charge builds up in the gate region. This charge builds up until it exceeds the threshold voltage of the MOSFET, causing it to switch to a conducting state. The drain-source region is then connected to a voltage source and current flows through the device until the gate voltage is removed. The SIE818DF-T1-GE3 can be used as an on and off switch, or it can be used to regulate the current flow through a circuit. When the device is in the conducting state, the voltage applied to the gate and drain-source regions determines the current that flows through the device.

The SIE818DF-T1-GE3 is a rugged and reliable device with a wide range of applications. It has been designed for use in high voltage applications and for DC-DC converters. Its low on-state resistance and high switching speed make it ideal for use in switch mode power supplies, low drop-out regulators, and motor drive stage applications. The SIE818DF-T1-GE3 has also been designed for use in industrial applications and for use as an on and off switch. It is also an excellent choice for use in high power transistors.

The SIE818DF-T1-GE3 is an ideal device for use in a wide range of electronic applications. It is a rugged, reliable, and efficient transistor with a high voltage rating and low on-state resistance. Its high switching speed and low power dissipation make it ideal for use in switch mode power supplies, low drop-out regulators, and motor drive stage applications. It is also an excellent option for use in industrial applications and as an on and off switch.

The specific data is subject to PDF, and the above content is for reference