SIE876DF-T1-GE3

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The SIE876DF-T1-GE3 is a single-channel enhancement mode MOSFET (metal–oxide–semiconductor field-effect transistor) which combines high power and breakthrough switching speeds. It can be used in variety of applications, such as power management, general DC/DC conversion, load switching, and high speed switching.

The SIE876DF-T1-GE3 offers both high performance and reliability by utilizing advanced technologies and design practices. Designed to operate in a low gate-drain voltage environment, the SIE876DF-T1-GE3 has a maximum drain-source voltage (VDS) rating of 18V and a gate threshold voltage (VGS) of 1V. It is designed for a maximum drain current (ID) of 7.5A and a maximum junction temperature (T(j)) rating of 150°C.

The MOSFET works by utilizing a gate-source voltage to control the flow of current between the drain and source terminals. The voltage at the gate is used to create an electric field which, in turn, controls the flow of current. When the gate voltage is high, it creates an electric field between the drain and source and effectively turns the MOSFET “on”, allowing current to pass through the channel. When the gate voltage is low, the electric field is reduced and the MOSFET is “off”, preventing current from passing.

The SIE876DF-T1-GE3 can be used in a variety of applications, including power management, DC/DC conversion, load switching, and high speed switching. In power management applications, it can be used to control the flow of power between the power source and the load. In DC/DC conversion applications, it can be used to convert a DC voltage to a lower or higher DC voltage. In load switching applications, it can be used to switch power between multiple loads. And in high speed switching applications, it can be used to switch power quickly and efficiently.

The SIE876DF-T1-GE3 is an ideal choice for high performance and reliability in applications that require high power and high efficiency. With its high performance characteristics, it is capable of achieving high levels of power efficiency and switching speeds. Additionally, its low gate-drain voltage ratings make it compatible with a wide range of power management systems.

The SIE876DF-T1-GE3 is part of a new generation of MOSFETs which offer a combination of high performance, reliability, and low power. With its advanced design and technology, it is capable of achieving breakthrough switching speeds, high power conversion efficiency, and high reliability. This makes it an ideal choice for a variety of applications, including power management, DC/DC conversion, load switching, and high speed switching.

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