2SK3747-1E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SK3747-1E is a single field-effect transistor (FET) which belongs to Toshiba’s J-FET line of products. It is designed for use in power control and switching applications, and is capable of handling currents up to 5 amperes. The 2SK3747-1E features a number of features such as low on-voltage, low gate charge, and low gate impedance, which make it useful for high frequency operations in power systems.

Operation Principle

The 2SK3747-1E is a MOSFET, or metal-oxide-semiconductor field-effect transistor, which is widely used in power control and switching applications. MOSFETs are four-terminal devices in which a gate terminal is used to control the conductivity of the channel between the source and drain electrodes. When an electric field is applied to the gate terminal, it causes the conductivity of the channel to increase, allowing current to flow between the source and drain terminals.

The 2SK3747-1E is designed for high-frequency operations, due to its low on-voltage, low gate charge, and low gate impedance properties. The low on-voltage of the 2SK3747-1E helps to reduce power dissipation and increase efficiency, by allowing the device to operate at lower voltages. The low gate charge and low gate impedance, on the other hand, helps reduce switching times, allowing the device to switch faster while consuming less power.

Application Field

The 2SK3747-1E is suitable for use in a wide variety of applications, including power control and switching applications. It is commonly used in applications such as motor control, power conversion, and power management. In these types of applications, the 2SK3747-1E can be used to control the power output of an electrical device, by controlling the conductivity of the channel between the source and the drain terminals.

It is also useful in switching applications, such as light dimming, alarm systems, and other control systems. In these types of applications, the 2SK3747-1E can be used to control the operational parameters of an electrical device, by controlling the conductivity of the channel between the source and the drain terminals. The low on-voltage, low gate charge, and low gate impedance properties of the 2SK3747-1E make it well-suited for high-frequency operations, enabling it to switch faster while consuming less power.

Conclusion

The 2SK3747-1E is a single FET which belongs to Toshiba’s J-FET line of products and is designed for use in power control and switching applications. It is designed for high-frequency operations due to its low on-voltage, low gate charge, and low gate impedance properties, making it suitable for use in motor control, power conversion, switching applications, and other control systems. Through the proper use of the 2SK3747-1E, electrical devices can become more efficient and efficient switching can be achieved.

The specific data is subject to PDF, and the above content is for reference