SIE802DF-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SIE802DF-T1-GE3 is a single field effect transistor (FET) device designed for a variety of applications including voltage regulation, switching, and interface. This type of FET utilizes a metal oxide semiconductor (MOS) structure and is optimized for both performance and cost-effectiveness. This article will provide an overview of the SIE802DF-T1-GE3 device and its application field, as well as its working principles.

Application Field

The SIE802DF-T1-GE3 can be used to replace traditional bipolar transistors in voltage regulation, switching circuits, and signal interface circuitry, such as microprocessors and analog electronics. In addition, the device can be used for power switching, current regulation, RF signal interfacing, and power switching circuits. The device is well suited for applications that require low gate leakage, high gate input impedance, low RDS(on) and ESD protection.

Working Principle

The SIE802DF-T1-GE3 works on the principle of field effect. In this process, a voltage is applied to the gate of the device which is used to control the flow of current between the drain and the source. The device offers an input capacitance which varies with applied voltage and can be used to control the current flow. There is also an internal resistor which is used to control current flow. The device has an off-state current which is used to improve device reliability and minimize leakage.

The SIE802DF-T1-GE3 uses a planar MOS technology, which provides an increase in breakdown voltage over conventional silicon oxide FETs. This increased breakdown voltage allows the device to be used in a wide range of applications. The device also includes a low on-resistance (RDS(on)), allowing it to be used in switch mode applications with low power loss.

The SIE802DF-T1-GE3 is well suited for a wide range of switch applications. The device has a low on-resistance which helps to minimize power losses and an ESD protection which helps to protect the device from electrostatic damage. The device also has a low gate leakage, ensuring that current leakage is minimized and power considerations are taken into account. The device is also well suited for RF switching applications, providing a low capacitance, low power loss and high-frequency response.

The SIE802DF-T1-GE3 is a versatile device with a variety of applications. It is capable of providing high performance and reliable operation in a wide range of switching and signal interfaces. The device is cost-effective and has the ability to improve overall system power efficiency. The device is well suited for a range of electronic applications, offering reliable performance and cost-effectiveness.

The specific data is subject to PDF, and the above content is for reference