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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
TC58NVG1S3HTAI0 TC58NVG1S3HTAI0
-ND		 TC58NVG1S3HTAI0 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TC58NVG1S3HTAI0-ND Datasheet
TH58NVG4S0HTA20 TH58NVG4S0HTA20
-ND		 TH58NVG4S0HTA20 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 16Gb (2G x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TH58NVG4S0HTA20-ND Datasheet
TC58NVG0S3HTAI0 TC58NVG0S3HTAI0
-ND		 TC58NVG0S3HTAI0 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 1Gb (128M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TC58NVG0S3HTAI0-ND Datasheet
TC58NVG1S3HTA00 TC58NVG1S3HTA00
-ND		 TC58NVG1S3HTA00 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TC58NVG1S3HTA00-ND Datasheet
THGBMHG6C1LBAIL THGBMHG6C1LBAIL
-ND		 THGBMHG6C1LBAIL Toshiba Memory America, Inc.
View more  Series: eMMC
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 64Gb (8G x 8)
 Clock Frequency: 52MHz
 Memory Interface: MMC
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -25C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 153-WFBGA
 Supplier Device Package: 153-WFBGA (11.5x13)
1000
Order

--

 THGBMHG6C1LBAIL-ND Datasheet
THGBMHG9C4LBAIR THGBMHG9C4LBAIR
-ND		 THGBMHG9C4LBAIR Toshiba Memory America, Inc.
View more  Series: eMMC
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 512Gb (64G x 8)
 Clock Frequency: 52MHz
 Memory Interface: MMC
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -25C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 153-WFBGA
 Supplier Device Package: 153-WFBGA (11.5x13)
1000
Order

--

 THGBMHG9C4LBAIR-ND Datasheet
TH58NYG3S0HBAI6 TH58NYG3S0HBAI6
-ND		 TH58NYG3S0HBAI6 Toshiba Memory America, Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 8Gb (1G x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
1000
Order

338+:

$4.6221

 TH58NYG3S0HBAI6-ND Datasheet
THGBMHG6C1LBAWL THGBMHG6C1LBAWL
-ND		 THGBMHG6C1LBAWL Toshiba Memory America, Inc.
View more  Series: eMMC
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 64Gb (8G x 8)
 Clock Frequency: 52MHz
 Memory Interface: MMC
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 153-WFBGA
 Supplier Device Package: 153-WFBGA (11.5x13)
1000
Order

--

 THGBMHG6C1LBAWL-ND Datasheet
TH58NVG2S3HTA00 TH58NVG2S3HTA00
-ND		 TH58NVG2S3HTA00 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
71
Order

--

 TH58NVG2S3HTA00-ND Datasheet
TC58BYG1S3HBAI6 TC58BYG1S3HBAI6
-ND		 TC58BYG1S3HBAI6 Toshiba Memory America, Inc.
View more  Series: Benand
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
1000
Order

1+:

$2.4885

10+:

$2.2554

25+:

$2.2065

50+:

$2.1943

100+:

$1.9678

250+:

$1.9605

500+:

$1.8883

1000+:

$1.7953

 TC58BYG1S3HBAI6-ND Datasheet
TC58BYG2S0HBAI6 TC58BYG2S0HBAI6
-ND		 TC58BYG2S0HBAI6 Toshiba Memory America, Inc.
View more  Series: Benand
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
191
Order

1+:

$3.2319

10+:

$2.9522

25+:

$2.8957

50+:

$2.8758

100+:

$2.5799

 TC58BYG2S0HBAI6-ND Datasheet
TC58BVG0S3HBAI6 TC58BVG0S3HBAI6
-ND		 TC58BVG0S3HBAI6 Toshiba Memory America, Inc.
View more  Series: Benand
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 1Gb (128M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
14
Order

--

 TC58BVG0S3HBAI6-ND Datasheet
TC58NVG1S3HBAI4 TC58NVG1S3HBAI4
-ND		 TC58NVG1S3HBAI4 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 63-VFBGA
 Supplier Device Package: 63-TFBGA (9x11)
26
Order

--

 TC58NVG1S3HBAI4-ND Datasheet
TC58NVG2S0HTA00 TC58NVG2S0HTA00
-ND		 TC58NVG2S0HTA00 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TC58NVG2S0HTA00-ND Datasheet
TC58NVG1S3ETA00 TC58NVG1S3ETA00
-ND		 TC58NVG1S3ETA00 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TC58NVG1S3ETA00-ND Datasheet
TC58NYG0S3HBAI6 TC58NYG0S3HBAI6
-ND		 TC58NYG0S3HBAI6 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 1Gb (128M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
1000
Order

--

 TC58NYG0S3HBAI6-ND Datasheet
TH58NVG2S3HTAI0 TH58NVG2S3HTAI0
-ND		 TH58NVG2S3HTAI0 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TH58NVG2S3HTAI0-ND Datasheet
TH58NVG5S0FTA20 TH58NVG5S0FTA20
-ND		 TH58NVG5S0FTA20 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 32Gb (4G x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TH58NVG5S0FTA20-ND Datasheet
TC58NVG2S0HBAI4 TC58NVG2S0HBAI4
-ND		 TC58NVG2S0HBAI4 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 63-VFBGA
 Supplier Device Package: 63-TFBGA (9x11)
7459
Order

--

 TC58NVG2S0HBAI4-ND Datasheet
TC58BVG1S3HBAI6 TC58BVG1S3HBAI6
-ND		 TC58BVG1S3HBAI6 Toshiba Memory America, Inc.
View more  Series: Benand
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
1000
Order

--

 TC58BVG1S3HBAI6-ND Datasheet
THGBMHG7C1LBAIL THGBMHG7C1LBAIL
-ND		 THGBMHG7C1LBAIL Toshiba Memory America, Inc.
View more  Series: eMMC
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 128Gb (16G x 8)
 Clock Frequency: 52MHz
 Memory Interface: MMC
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -25C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 153-WFBGA
 Supplier Device Package: 153-WFBGA (11.5x13)
1000
Order

--

 THGBMHG7C1LBAIL-ND Datasheet
TH58BYG2S3HBAI6 TH58BYG2S3HBAI6
-ND		 TH58BYG2S3HBAI6 Toshiba Memory America, Inc.
View more  Series: Benand
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
96
Order

1+:

$3.8808

10+:

$3.5425

25+:

$3.4748

50+:

$3.451

 TH58BYG2S3HBAI6-ND Datasheet
THGBMHG8C4LBAWR THGBMHG8C4LBAWR
-ND		 THGBMHG8C4LBAWR Toshiba Memory America, Inc.
View more  Series: eMMC
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 256Gb (32G x 8)
 Clock Frequency: 52MHz
 Memory Interface: MMC
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 153-WFBGA
 Supplier Device Package: 153-WFBGA (11.5x13)
1000
Order

--

 THGBMHG8C4LBAWR-ND Datasheet
TH58NVG3S0HTAI0 TH58NVG3S0HTAI0
-ND		 TH58NVG3S0HTAI0 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 8Gb (1G x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TH58NVG3S0HTAI0-ND Datasheet
TC58NYG2S0HBAI6 TC58NYG2S0HBAI6
-ND		 TC58NYG2S0HBAI6 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
11
Order

--

 TC58NYG2S0HBAI6-ND Datasheet
TC58NVG2S0FTA00 TC58NVG2S0FTA00
-ND		 TC58NVG2S0FTA00 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

--

 TC58NVG2S0FTA00-ND Datasheet
TC58BVG2S0HBAI4 TC58BVG2S0HBAI4
-ND		 TC58BVG2S0HBAI4 Toshiba Memory America, Inc.
View more  Series: Benand
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 4Gb (512M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 63-VFBGA
 Supplier Device Package: 63-TFBGA (9x11)
1000
Order

--

 TC58BVG2S0HBAI4-ND Datasheet
THGBMHG8C2LBAIL THGBMHG8C2LBAIL
-ND		 THGBMHG8C2LBAIL Toshiba Memory America, Inc.
View more  Series: eMMC
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 256Gb (32G x 8)
 Clock Frequency: 52MHz
 Memory Interface: MMC
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -25C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 153-WFBGA
 Supplier Device Package: 153-WFBGA (11.5x13)
1000
Order

--

 THGBMHG8C2LBAIL-ND Datasheet
TH58NVG4S0HTAK0 TH58NVG4S0HTAK0
-ND		 TH58NVG4S0HTAK0 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 16Gb (2G x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

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 TH58NVG4S0HTAK0-ND Datasheet
TC58BYG0S3HBAI6 TC58BYG0S3HBAI6
-ND		 TC58BYG0S3HBAI6 Toshiba Memory America, Inc.
View more  Series: Benand
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 1Gb (128M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
1000
Order

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 TC58BYG0S3HBAI6-ND Datasheet
TC58NVG0S3HBAI6 TC58NVG0S3HBAI6
-ND		 TC58NVG0S3HBAI6 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 1Gb (128M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
1000
Order

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 TC58NVG0S3HBAI6-ND Datasheet
THGBMHG9C8LBAWG THGBMHG9C8LBAWG
-ND		 THGBMHG9C8LBAWG Toshiba Memory America, Inc.
View more  Series: eMMC
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 512Gb (64G x 8)
 Clock Frequency: 52MHz
 Memory Interface: MMC
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 153-WFBGA
 Supplier Device Package: 153-WFBGA (11.5x13)
1000
Order

1+:

$0

 THGBMHG9C8LBAWG-ND Datasheet
TC58NYG1S3HBAI6 TC58NYG1S3HBAI6
-ND		 TC58NYG1S3HBAI6 Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 67-VFBGA
 Supplier Device Package: 67-VFBGA (6.5x8)
459
Order

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 TC58NYG1S3HBAI6-ND Datasheet
THGBMHG7C2LBAWR THGBMHG7C2LBAWR
-ND		 THGBMHG7C2LBAWR Toshiba Memory America, Inc.
View more  Series: eMMC
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 128Gb (16G x 8)
 Clock Frequency: 52MHz
 Memory Interface: MMC
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 153-WFBGA
 Supplier Device Package: 153-WFBGA (11.5x13)
1500
Order

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 THGBMHG7C2LBAWR-ND Datasheet
AP-CF008GH4NR-NDNRQ AP-CF008GH4NR-N
DNRQ-ND		 AP-CF008GH4NR-N
DNRQ		 Apacer Memory America
View more  Series: ATA CF
 Part Status: Active
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Memory Type: ATA Flash
 Memory Size: 8GB
 Technology: SLC
 Operating Temperature: 0C ~ 70C
1000
Order

1+:

$79.8903

 AP-CF008GH4NR-NDNRQ-ND Datasheet
AP-CF004GH4NR-NDNRQ AP-CF004GH4NR-N
DNRQ-ND		 AP-CF004GH4NR-N
DNRQ		 Apacer Memory America
View more  Series: ATA CF
 Part Status: Active
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Memory Type: ATA Flash
 Memory Size: 4GB
 Technology: SLC
 Operating Temperature: 0C ~ 70C
1000
Order

1+:

$47.8422

 AP-CF004GH4NR-NDNRQ-ND Datasheet
AP-CF001GH4NR-NDNRQ AP-CF001GH4NR-N
DNRQ-ND		 AP-CF001GH4NR-N
DNRQ		 Apacer Memory America
View more  Series: ATA CF
 Part Status: Active
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Memory Type: ATA Flash
 Memory Size: 1GB
 Technology: SLC
 Operating Temperature: 0C ~ 70C
1000
Order

1+:

$25.6032

 AP-CF001GH4NR-NDNRQ-ND Datasheet
AP-CF002GH4NR-NDNRQ AP-CF002GH4NR-N
DNRQ-ND		 AP-CF002GH4NR-N
DNRQ		 Apacer Memory America
View more  Series: ATA CF
 Part Status: Active
 Lead Free Status / RoHS Status: Lead free / RoHS Compliant
 Memory Type: ATA Flash
 Memory Size: 2GB
 Technology: SLC
 Operating Temperature: 0C ~ 70C
1000
Order

1+:

$37.0125

 AP-CF002GH4NR-NDNRQ-ND Datasheet
TC58CYG0S3HQAIE TC58CYG0S3HQAIE
-ND		 TC58CYG0S3HQAIE Toshiba Memory America, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 1Gb (128M x 8)
 Clock Frequency: 104MHz
 Access Time: 155s
 Memory Interface: SPI
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 16-SOIC (0.295", 7.50mm Width)
 Supplier Device Package: 16-SOP
1000
Order

1+:

$0

 TC58CYG0S3HQAIE-ND Datasheet
TC58BVG1S3HTAI0 TC58BVG1S3HTAI0
-ND		 TC58BVG1S3HTAI0 Toshiba Memory America, Inc.
View more  Series: Benand
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND (SLC)
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Access Time: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 48-TSOP I
1000
Order

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 TC58BVG1S3HTAI0-ND Datasheet
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