
Allicdata Part #: | TC58BYG1S3HBAI6-ND |
Manufacturer Part#: |
TC58BYG1S3HBAI6 |
Price: | $ 2.74 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Toshiba Memory America, Inc. |
Short Description: | IC FLASH 2G PARALLEL 67VFBGA |
More Detail: | FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parall... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 2.48850 |
10 +: | $ 2.25540 |
25 +: | $ 2.20651 |
50 +: | $ 2.19429 |
100 +: | $ 1.96781 |
250 +: | $ 1.96048 |
500 +: | $ 1.88829 |
1000 +: | $ 1.79528 |
Series: | Benand™ |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (SLC) |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 67-VFBGA |
Supplier Device Package: | 67-VFBGA (6.5x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TC58BYG1S3HBAI6 is a type of memory specifically designed for mission-critical applications, such as automotive, industrial, aerospace, and military systems. It is a type of high-density NAND flash memory, which is highly reliable and offers a high performance level. This memory is manufactured by Toshiba, one of the leading memory makers in the industry.
The TC58BYG1S3HBAI6 offers a wide array of features and characteristics, making it well-suited for the demanding applications mentioned above. It is available in densities up to 8Gbits and is capable of operating at an extremely fast read/write speed of 25Mhz. Additionally, this memory has an impressive endurance rating of up to 10,000 write/erase cycles and also offers an extended temperature range of -40°C to 85°C.
The TC58BYG1S3HBAI6 also features an impressive set of security features, such as on-chip password protection and 256-bit AES encryption/decryption for added protection. It also supports a variety of memory commands, including Page Mode, Random Data Input/Output, Data Input/Output, and command latch mode. These features are essential in mission-critical applications, especially in highly-secure ones.
The TC58BYG1S3HBAI6 offers a variety of application fields, such as automotive infotainment systems, industrial systems, military systems, and aerospace applications. In automotive applications, it can be used for navigation mapping, sensor data storage, and vehicle status recording. It can also help in enhancing the safety and reliability of these systems by providing secure data storage and reliable data access.
In industrial applications, the TC58BYG1S3HBAI6 can be used for industrial automation, data acquisition, and machine vision. In military applications, the memory can be used for mission-critical applications such as fleet management, remote tracking, and unmanned vehicle control. Finally, in aerospace applications, it can be used for satellite navigation, aircraft control systems, and drone operation.
The TC58BYG1S3HBAI6 memory functions on the same basic principles as other types of memory. It utilizes an array of transistors and capacitors to store information on a chip. The chip is made of tiny transistors and capacitors that are interlinked to form the individual storage cells. When power is applied to the chip, the memory cells become charged, allowing them to store data. The TC58BYG1S3HBAI6 also supports various commands, such as read, write, erase, and programming.
The TC58BYG1S3HBAI6 is an extremely versatile memory solution, offering superior performance, reliability, and security for mission-critical applications. It is capable of operating in a wide range of temperatures and is available in densities up to 8Gbits. Additionally, the memory offers an impressive array of security features and supports a variety of memory commands. The TC58BYG1S3HBAI6 is perfect for a variety of applications, making it an ideal choice for any mission-critical system.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
TC58BVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
TC58BYG1S3HBAI6 | Toshiba Memo... | 2.74 $ | 1000 | IC FLASH 2G PARALLEL 67VF... |
TC58BVG0S3HBAI4 | Toshiba Memo... | -- | 41 | IC FLASH 1G PARALLEL 63TF... |
TC58NVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NVG0S3HTA00 | Toshiba Memo... | -- | 25510 | IC FLASH 1G PARALLEL 48TS... |
TC58NVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58BVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NYG2S0HBAI6 | Toshiba Memo... | -- | 11 | IC FLASH 4G PARALLEL 67VF... |
TC58NVG2S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58BVG0S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58BVG2S0HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 63TF... |
TC58BYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58NVG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58NVG2S0HBAI6 | Toshiba Memo... | -- | 37 | IC FLASH 4G PARALLEL 67VF... |
TC58NVG0S3HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 63TF... |
TC58 | Cornell Dubi... | 0.0 $ | 1000 | CAP ALUM 40UF 250V AXIAL4... |
TC58NVG2S0HBAI4 | Toshiba Memo... | -- | 7459 | IC FLASH 4G PARALLEL 63TF... |
TC58NVG1S3ETAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58BVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
TC58BYG2S0HBAI6 | Toshiba Memo... | 3.56 $ | 191 | IC FLASH 4G PARALLEL 67VF... |
TC58CVG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
TC58BVG0S3HBAI6 | Toshiba Memo... | -- | 14 | IC FLASH 1G PARALLEL 67VF... |
TC58CVG0S3HRAIG | Toshiba Memo... | -- | 1000 | IC FLASH 1G SPI 104MHZ 8W... |
TC58NVG3S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 8G PARALLEL 48TS... |
TC58BVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG1S3ETA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58NVG1S3HBAI4 | Toshiba Memo... | -- | 26 | IC FLASH 2G PARALLEL 63TF... |
TC58NVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58BVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NYG1S3HBAI6 | Toshiba Memo... | -- | 459 | IC FLASH 2G PARALLEL 67VF... |
TC58CYG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
TC58BVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58CVG2S0HRAIG | Toshiba Memo... | 5.08 $ | 1000 | IC FLASH 4G SPI 104MHZ 8W... |
TC58CVG2S0HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 4G SPI 104MHZ 16... |
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