TC58NVG0S3HTAI0 Allicdata Electronics
Allicdata Part #:

TC58NVG0S3HTAI0-ND

Manufacturer Part#:

TC58NVG0S3HTAI0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Toshiba Memory America, Inc.
Short Description: IC FLASH 1G PARALLEL 48TSOP I
More Detail: FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parall...
DataSheet: TC58NVG0S3HTAI0 datasheetTC58NVG0S3HTAI0 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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TC58NVG0S3HTAI0 Application Field and Working Principle

The TC58NVG0S3HTAI0 is a NAND flash memory device that has been extensively used in a variety of memory applications. As a multi-level cell (MLC) device, it offers the highest capacity available today for data storage. It is also one of the most reliable types of memory available on the market, ensuring data integrity and longevity.

The TC58NVG0S3HTAI0 is currently used in a variety of different applications such as digital cameras, digital video recorders, MP3 players, video games, PC notebooks, and many other digital devices. It is increasingly being used for embedded applications as well, due to its superior data storage capabilities, as well as its low power consumption. This type of device is particularly popular in the mobile and portable device market, as it offers high capacity in a very compact form-factor.

The device relies on the NAND flash memory architecture in order to store data. NAND is a type of non-volatile memory that uses bits called "cells" to store each bit of data. The cells have different levels of electrical charge, which represent either a 0 or a 1, depending on the level of charge. As an MLC device, the TC58NVG0S3HTAI0 has two levels of electrical charge, which can be used to store four different bits of data in each cell. This means that the device can offer a greater degree of data storage than is achievable with other memory architectures.

From a technical standpoint, the device uses a 16 MB of DDR SDRAM, three 4 Gb (or 8 Gb) NAND flash, and two mobile DDRs for its internal operations. This allows the device to reach maximum speeds of 1.33 GHz at 800 MHz and 1.1 GHz at 667 MHz. The device runs on a 3.3V or 5.0V voltage range. It is also equipped with a variety of redundant error correction codes (ECCs) to ensure data reliability and integrity throughout the duration of device operation.

Because of its capacity and reliable data storage capabilities, the TC58NVG0S3HTAI0 has become a popular choice for a variety of memory applications, especially those with high data storage requirements. This type of device is also well-suited for applications that require the ability to quickly store and retrieve data, as it can do so at an incredibly fast rate. It is also an efficient device for embedded applications, as it offers a great amount of storage capacity in a very small form factor, while consuming very little power.

The specific data is subject to PDF, and the above content is for reference

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