| Allicdata Part #: | TC58NVG1S3HTAI0-ND |
| Manufacturer Part#: |
TC58NVG1S3HTAI0 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Toshiba Memory America, Inc. |
| Short Description: | IC FLASH 2G PARALLEL 48TSOP I |
| More Detail: | FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parall... |
| DataSheet: | TC58NVG1S3HTAI0 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND (SLC) |
| Memory Size: | 2Gb (256M x 8) |
| Write Cycle Time - Word, Page: | 25ns |
| Access Time: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 48-TSOP I |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TC58NVG1S3HTAI0 Memory is a multi-level NAND Flash memory device that can store nonvolatile computer data on a single integrated circuit. It is ideal for industrial, personal, networking and mobile applications. In this article, we will discuss the application field and working principle of the TC58NVG1S3HTAI0 Memory.
One of the most common applications of the TC58NVG1S3HTAI0 Memory is in the industrial sector. It is often used in industrial control systems to store logic signals, specific commands and data, and to maintain its contents as long as there is power. This makes it ideal for controlling process automation or for industrial-grade memory modules for automating certain operations. Additionally, the device can also be used as a memory module in industrial machines, such as robots or other automated equipment.
The TC58NVG1S3HTAI0 Memory is also used in the personal sector. It is used in a variety of consumer products such as laptops, tablets, digital cameras, and MP3 players. It is also used in digital cameras as it can store large amounts of data, thus allowing users to take more pictures or videos with the same device.
In the networking sector, the TC58NVG1S3HTAI0 Memory is also used for storage in routers, switch circuits, and other networking equipment. It is used for data buffering, workload balancing, caching, and memory performance optimization. It is also highly reliable and can tolerate high temperatures and contains error correction circuits, making it suitable for robust networking applications.
Finally, the TC58NVG1S3HTAI0 Memory is also used in the mobile sector. It is used heavily in the popular smartphones, tablets, and other mobile devices. It is known for its high data transfer speeds and good energy efficiency, allowing mobile devices to store more data while using less power. It also has a significantly longer lifetime compared to other memory types.
In terms of its working principle, the TC58NVG1S3HTAI0 Memory is a multi-level NAND Flash memory device. It is composed of cells. Each cell contains two transistors, a control gate and a floating gate. The control gate receives a signal from the controller for writing or erasing data. When a signal is sent, the data is written or erased from the cells. All the cells in the array are programmed at the same time in a single operation. When reading, the data is stored in the cells and the controller is able to read from the cells in order to obtain the desired data.
In conclusion, the TC58NVG1S3HTAI0 Memory is a reliable and efficient memory device for efficiently storing nonvolatile computer data. It is used in a wide variety of different application fields, from the industrial and personal sectors to networking and mobile devices. Its working principle relies on the use of cells and transistors to write, erase and read data.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TC58CVG2S0HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 4G SPI 104MHZ 16... |
| TC58BVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
| TC58BYG1S3HBAI6 | Toshiba Memo... | 2.74 $ | 1000 | IC FLASH 2G PARALLEL 67VF... |
| TC58NVG0S3HTA00 | Toshiba Memo... | -- | 25510 | IC FLASH 1G PARALLEL 48TS... |
| TC58CYG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
| TC58BVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
| TC58BYG2S0HBAI6 | Toshiba Memo... | 3.56 $ | 191 | IC FLASH 4G PARALLEL 67VF... |
| TC58BVG0S3HBAI4 | Toshiba Memo... | -- | 41 | IC FLASH 1G PARALLEL 63TF... |
| TC58NVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58CVG0S3HRAIG | Toshiba Memo... | -- | 1000 | IC FLASH 1G SPI 104MHZ 8W... |
| TC58NVG3S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 8G PARALLEL 48TS... |
| TC58NVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
| TC58CVG2S0HRAIG | Toshiba Memo... | 5.08 $ | 1000 | IC FLASH 4G SPI 104MHZ 8W... |
| TC58NVG1S3ETAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58CVG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
| TC58NVG2S0HBAI6 | Toshiba Memo... | -- | 37 | IC FLASH 4G PARALLEL 67VF... |
| TC58NVG0S3HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 63TF... |
| TC58BVG0S3HBAI6 | Toshiba Memo... | -- | 14 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG1S3ETA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG1S3HBAI4 | Toshiba Memo... | -- | 26 | IC FLASH 2G PARALLEL 63TF... |
| TC58NVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58BVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58BVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58 | Cornell Dubi... | 0.0 $ | 1000 | CAP ALUM 40UF 250V AXIAL4... |
| TC58NVG2S0HBAI4 | Toshiba Memo... | -- | 7459 | IC FLASH 4G PARALLEL 63TF... |
| TC58NYG2S0HBAI6 | Toshiba Memo... | -- | 11 | IC FLASH 4G PARALLEL 67VF... |
| TC58NVG2S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58BVG0S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
| TC58BVG2S0HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 63TF... |
| TC58BVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58BYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58BVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
| TC58NYG1S3HBAI6 | Toshiba Memo... | -- | 459 | IC FLASH 2G PARALLEL 67VF... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
TC58NVG1S3HTAI0 Datasheet/PDF