TC58BVG0S3HBAI6 Allicdata Electronics
Allicdata Part #:

TC58BVG0S3HBAI6-ND

Manufacturer Part#:

TC58BVG0S3HBAI6

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Toshiba Memory America, Inc.
Short Description: IC FLASH 1G PARALLEL 67VFBGA
More Detail: FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parall...
DataSheet: TC58BVG0S3HBAI6 datasheetTC58BVG0S3HBAI6 Datasheet/PDF
Quantity: 14
Stock 14Can Ship Immediately
Specifications
Series: Benand™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 67-VFBGA
Supplier Device Package: 67-VFBGA (6.5x8)
Description

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The TC58BVG0S3HBAI6 is a multi-chip embedded memory module which uses an advanced technology called MirrorBit NAND. It is a type of non-volatile memory that has a high density, strong read and write performance, low power consumption and is most commonly used in mobile phones, digital cameras, portable media players, embedded systems and other handheld devices. In this article, we will discuss the application fields and working principle of the TC58BVG0S3HBAI6.

The TC58BVG0S3HBAI6 is an advanced multi-chip embedded memory module. It consistst of: one Flash controller, one Parallel NOR Flash Memory, and one NAND Flash Memory. The application fields of the TC58BVG0S3HBAI6 include mobile phones, digital cameras, portable media players, embedded systems, and other handheld devices. It has excellent read/write performance, is highly reliable, and it has an advanced error correction code (ECC) support.

The working principle of the TC58BVG0S3HBAI6 is based on the NAND flash technology. NAND flash is a type of non-volatile memory which uses floating-gate transistors to store data. It is composed of multiple cells, each with its own memory. Data stored in a NAND flash cell can be either erased or written depending on the amount of current applied to the cell. The TC58BVG0S3HBAI6 is able to store up to 10Gb of data using this effective NAND Flash technology.

The TC58BVG0S3HBAI6 has many advantages over other memory types. It consists of a Parallel NOR Flash Memory, which provides fast read and write operations and is highly reliable. The advanced error correction code (ECC) support ensures that data stored in the memory module is secure and is not corrupted or lost. The NAND Flash Memory provides high density and low power consumption, making it ideal for mobile applications. Its advanced technology also reduces the possibility of having laser defects.

The TC58BVG0S3HBAI6 Memory is a powerful, high-density embedded memory module which is perfect for mobile phone, digital camera, and portable device applications. It is composed of a Flash controller, a Parallel NOR Flash Memory, and a NAND Flash Memory. Its advanced NAND flash technology provides fast read/write performance, high data density, low power consumption, and reliable data storage. The ECC support ensures secure data storage and minimizes the possibility of errors. It is an ideal memory module for mobile and embedded device applications.

The specific data is subject to PDF, and the above content is for reference

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