| Allicdata Part #: | TC58CYG0S3HQAIE-ND |
| Manufacturer Part#: |
TC58CYG0S3HQAIE |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Toshiba Memory America, Inc. |
| Short Description: | IC FLASH 1G SPI 104MHZ 16SOP |
| More Detail: | FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) SPI 10... |
| DataSheet: |  TC58CYG0S3HQAIE Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND (SLC) |
| Memory Size: | 1Gb (128M x 8) |
| Clock Frequency: | 104MHz |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 155µs |
| Memory Interface: | SPI |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package: | 16-SOP |
Description
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The TC58CYG0S3HQAIE memory is used in many applications. It is designed to provide a high-performance, reliable and cost-efficient solution for embedded applications, networking and communications applications, and industrial automation applications. It can also be used in consumer electronic products. It has a dual-die stack of memory die and logic die, providing a total memory capacity of up to 1 Gb.The TC58CYG0S3HQAIE memory features a wide range of features including non-volatile, low-power, and fast read and write operations. It also offers improved latency and throughput for applications requiring high levels of performance. Its dual-die stack reduces heat and power consumption, making it suitable for applications where power efficiency and heat dissipation are critical.The TC58CYG0S3HQAIE memory is ideal for a wide range of applications including automotive, Internet of Things (IoT), digital signage, medical devices, data centers, security and surveillance, and industrial automation. For automotive applications, the memory is designed to provide reliable data storage and compute performance while being able to withstand harsh operating environments. The memory is also qualified to automotive AEC-Q100 Class 2 standard, making it suitable for automotive systems.The working principle of the TC58CYG0S3HQAIE memory is based on the so-called NAND Flash technology. NAND flash memory enables reliable non-volatile storage of data at significantly lower power and cost than traditional DRAM or SRAM memory technologies. The two die stacked components of the memory enable a denser, more flexible, and more cost-effective solution compared to single-die, non-stackable solutions.The TC58CYG0S3HQAIE memory is designed to offer maximum performance and reliability for embedded applications such as connected applications like cameras, navigation systems, and other sensor-enabled devices. It can support a wide range of computing and storage operations with fast read and write speeds. The dual-die stack also allows for enhanced storage density, allowing more data to be stored in the same size of memory die.The memory uses a NAND Flash technology, which supports fast data transfer with minimal latency and high throughput. The dual-die stack reduces heat and power consumption while providing a wide range of features including reliability, security, and high speed. The memory also supports various error detection and prevention protocols, making it highly reliable.In conclusion, the TC58CYG0S3HQAIE memory is an ideal solution for a wide range of memory-intensive applications, providing the performance and reliability that the most demanding applications require. Its dual-die stack architecture enables high-density storage and fast read and write speeds. Furthermore, its power and heat efficiency make it suitable for automotive applications and embedded designs.
The specific data is subject to PDF, and the above content is for reference
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