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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
BSB028N06NN3GXU MA1TR-ND	BSB028N06NN3GXU MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 22A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 102A Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 30V Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M Package / Case: 3-WDSON	5000 Order	--
IRFS7537TRLPBFT R-ND	IRFS7537TRLPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 173A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150A Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPA60R160C6XKSA 1-ND	IPA60R160C6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 750A Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $2.5704 10+: $2.2976 100+: $1.8839 500+: $1.5255 1000+: $1.2865
IGW100N60H3FKSA 1-ND	IGW100N60H3FKSA 1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A Power - Max: 714W Switching Energy: 3.7mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 625nC Td (on/off) @ 25C: 30ns/265ns Test Condition: 400V, 100A, 3.5 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	1000 Order	240+: $3.5229
IRFR120ZTR-ND	IRFR120ZTR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF530NSPBF-ND	IRF530NSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Power Dissipation (Max): 3.8W (Ta), 70W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRL3705ZSCT-ND	IRL3705ZSTRL	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Power Dissipation (Max): 130W (Tc) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF6648TR-ND	IRF6648TR1	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4.9V @ 150A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 25V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MN Package / Case: DirectFET Isometric MN	1000 Order	--
BSL207SPL6327HT SA1TR-ND	BSL207SPL6327HT SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 40A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 15V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	1+: $0
BBY51E6327-ND	BBY 51 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz Capacitance Ratio: 2.2 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 7V Diode Type: 1 Pair Common Cathode Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Base Part Number: BBY51	1000 Order	1+: $0
BSP296E6433-ND	BSP296 E6433	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id: 1.8V @ 400A Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 25V Power Dissipation (Max): 1.79W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
SPD15N06S2L-64- ND	SPD15N06S2L-64	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 64 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 14A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SPP100N04S2L-03 -ND	SPP100N04S2L-03	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
BAR50-02VE6327- ND	BAR 50-02V E632 7	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: PIN - Single Voltage - Peak Reverse (Max): 50V Current - Max: 100mA Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz Resistance @ If, F: 4.5 Ohm @ 10mA, 100MHz Power Dissipation (Max): 250mW Operating Temperature: 150C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Base Part Number: BAR50	1000 Order	1+: $0
BA892H6433XTMA1 TR-ND	BA892H6433XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard - Single Voltage - Peak Reverse (Max): 35V Current - Max: 100mA Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500 mOhm @ 10mA, 100MHz Operating Temperature: 150C (TJ) Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Base Part Number: BA892	1000 Order	1+: $0
IRF7459PBF-ND	IRF7459PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF7413QTRPBFCT -ND	IRF7413QTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRFR3711ZCTRPBF CT-ND	IRFR3711ZCTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.45V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IPS031N03LGIN-N D	IPS031N03L G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
IPB100N04S204AT MA1TR-ND	IPB100N04S204AT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPP80N04S2H4AKS A1-ND	IPP80N04S2H4AKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
IPP80N06S2L05AK SA1-ND	IPP80N06S2L05AK SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
IRFH5250TR2PBFC T-ND	IRFH5250TR2PBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 45A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
IPD60R950C6INTR -ND	IPD60R950C6	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 130A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFH5255TRPBF-N D	IRFH5255TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 15A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 988pF @ 13V Power Dissipation (Max): 3.6W (Ta), 26W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	1000 Order	--
IRF8113GPBF-ND	IRF8113GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
BSP135L6433HTMA 1TR-ND	BSP135L6433HTMA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V Vgs(th) (Max) @ Id: 1V @ 94A Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
IPB230N06L3GATM A1TR-ND	IPB230N06L3GATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 11A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 30V Power Dissipation (Max): 36W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
AUIRLZ44ZSTRL-N D	AUIRLZ44ZSTRL	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 16V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount	1000 Order	1+: $0
T880N14TOFXPSA1 -ND	T880N14TOFXPSA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 880A Current - On State (It (RMS)) (Max): 1.75A Voltage - Gate Trigger (Vgt) (Max): 2.2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 120C Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK	1000 Order	1+: $79.7643
TZ310N22KOFHPSA 1-ND	TZ310N22KOFHPSA 1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.2kV Current - On State (It (AV)) (Max): 445A Current - On State (It (RMS)) (Max): 700A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	3+: $91.6041
IDV08E65D2XKSA1 -ND	IDV08E65D2XKSA1	Infineon Technologies	View more Packaging: Tube Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 8A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 40A @ 650V Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40C ~ 175C	91 Order	1+: $1.0962 10+: $0.9866 100+: $0.7931 500+: $0.6516 1000+: $0.5399
IDP30E65D2XKSA1 -ND	IDP30E65D2XKSA1	Infineon Technologies	View more Packaging: Tube Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 40A @ 650V Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -40C ~ 175C	1000 Order	500+: $0.8474
SIDC56D170E6X1S A1-ND	SIDC56D170E6X1S A1	Infineon Technologies	View more Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 27A @ 1700V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40C ~ 150C	1000 Order	1+: $0
IDW12G65C5FKSA1 -ND	IDW12G65C5FKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Discontinued at Digi-Key Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 500A @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $4.4352 10+: $4.0364 100+: $3.3985 500+: $3.0017 1000+: $2.6567
BAS21E6359HTMA1 -ND	BAS21E6359HTMA1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150C (Max)	1000 Order	1+: $0
IRD3CH11DD6-ND	IRD3CH11DD6	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IRD3CH24DB6-ND	IRD3CH24DB6	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
DD230S22K-ND	DD230S22K	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	3+: $126.01
IRDC3048-ND	IRDC3048	Infineon Technologies	View more Part Status: Obsolete Main Purpose: DC/DC, Step Down with LDO Outputs and Type: 3, Non-Isolated Voltage - Output: 1.8V, 2.5V, 3.3V Current - Output: 4A, 4A, 2A Regulator Topology: Buck Frequency - Switching: 200kHz Board Type: Fully Populated Supplied Contents: Board(s) Utilized IC / Part: IRU3048	1000 Order	1+: $0

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