IRFH5255TRPBF Allicdata Electronics
Allicdata Part #:

IRFH5255TRPBF-ND

Manufacturer Part#:

IRFH5255TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 15A 8VQFN
More Detail: N-Channel 25V 15A (Ta), 51A (Tc) 3.6W (Ta), 26W (T...
DataSheet: IRFH5255TRPBF datasheetIRFH5255TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 26W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 988pF @ 13V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRFH5255TRPBF is a single N-channel power MOSFET in C1D3 (Fellous) package. It is designed to withstand high current load and offers excellent load switching performance. This device is mainly used in high-end industrial operations such as motors and actuators. It has the characteristics of low gate threshold voltage, low on-state resistance, very low gate charge and internal gate protection.

MOSFETs (metal-oxide-semiconductor field-effect transistors) are semiconductor devices. This type of transistor works on the principle of transferring electrons through an insulated gate, which is used to control the flow of current. They are used in different applications such as power supply regulation, motor control, telecommunications and computing. IRFH5255TRPBF is frequently used in energy-saving power applications. It can regulate the voltage or current of the power input to achieve the desired output.

IRFH5255TRPBF has a high power capability which makes it ideal for high current switching. It is also suitable for use in high-efficiency power systems such as automotive electronics and industrial motor control. This device also has a low total gate charge which ensures fast switching performance and minimal power dissipation. The maximum operating temperature of this device is 175°C.

Moreover, IRFH5255TRPBF has an internal gate protection diode. This diode provides overcurrent protection and reduces the need for an external diode. This device is also equipped with a low on-state resistance which helps to reduce heat dissipation and increases efficiency. IRFH5255TRPBF also has a robust design which ensures that it can withstand high current and power without any damage.

Overall, IRFH5255TRPBF is a reliable and efficient single N-channel power MOSFET. It can be used in a wide range of applications because of its excellent load switching performance and low on-state resistance properties. This type of transistor is also suitable for use in high-efficiency power systems such as automotive electronics and industrial motor control. Its high power capability, coupled with its internal gate protection diode, makes it an ideal choice for these types of applications.

The specific data is subject to PDF, and the above content is for reference

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