IRF8113GPBF

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IRF8113GPBF is a single N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a voltage-controlled device and is primarily used as a switch, to control current flow. It is designed with a low on-state resistance (RDS(on)) for high efficiency in power switch applications.

Applications

IRF8113GPBF is suitable for operating in standard power supply circuits with a temperature range from -55°C to 175°C. It is popularly used in switching applications such as motor speed control, lighting control, and heater circuits. It is also used in DC-DC converters, bus converters, and audio equipment.

Construction and Working Principle

IRF8113GPBF is a three-phase structure consisting of a body substrate, source terminal, drain terminal and gate terminal. It is fabricated using advanced high-voltage technology (SmartFET™) with a dedicated low-voltage power MOSFET process. Its source and drain terminals are created on a single 100nm thick layer of silicon dioxide (SiO2) insulation. This enhances the chip’s performance, as well as its reliability. Gate terminal is constructed using a high voltage dielectric oxide for low charging current. It also features many advanced design features such as low gate charge (Qg) for improved switching speeds.

The working principle of IRF8113GPBF is that it can be used to control the current flow between the source and drain terminals by applying a voltage (VGS) to the gate terminal. When VGS is less than the threshold voltage, the transistor is said to be “open”, and no current flows between the source and drain terminals. When VGS exceeds the threshold voltage, the transistor is said to be “closed”, and current will flow between the source and drain terminals.

The amount of current flowing through the transistor is determined by the applied gate voltage. A higher gate voltage will cause a higher current to flow through the transistor, and vice-versa. This allows the transistor to be used for large power demands, as the current flow can be adjusted to suit the load. The device is also quite robust, as it can handle voltages up to 175V.

Performance

The IRF8113GPBF transistor offers superior performance compared to traditional transistors. It offers a low on-state resistance (RDS(on)) of 1.7Ω, making it highly efficient in power switch applications. It also has a high power dissipation capability of 1.0A, and a maximum drain source voltage of 175V. It can operate with a pulse width of up to 800ns, and offers a switching speed of up to 1MHz.

The device also offers good ESD protection, with a minimum withstand voltage of 2kV, and a maximum returnloss of -32 dB. This makes it ideal for use in situations where ESD protection is required. Additionally, it has a low gate leakage current of 1µA.

Conclusion

In conclusion, IRF8113GPBF is a single N-channel MOSFET transistor, which is suitable for standard power supply applications. It is designed with a low on-state resistance (RDS(on)) for high efficiency in power switch applications, and offers superior performance compared to traditional transistors. Additionally, it has a high power dissipation capability, can handle voltages up to 175V, and offers good ESD protection. For these reasons, the IRF8113GPBF is a popular choice for use in voltage-controlled switching applications.

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