IRL3705ZSTRL Allicdata Electronics
Allicdata Part #:

IRL3705ZSCT-ND

Manufacturer Part#:

IRL3705ZSTRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 130W (Tc) Surface Mount D2P...
DataSheet: IRL3705ZSTRL datasheetIRL3705ZSTRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The IRL3705ZSTR is an Advanced Super Junction MOSFET that has been specifically designed for switching applications that utilize high-current, high-voltage and is engineered to provide lower power losses in the same space with less heat generation. It is ideal for applications such as motor-control, load-switching and lighting-control. The IRL3705ZSTR is also suitable for switching large currents over long distances, making it an ideal choice for energy-efficient power supply applications.

A MOSFET is a type of field-effect transistor that consists of one or more control gate electrodes and a gate dielectric layer between the gate electrode and the semiconductor. There are two types of MOSFETs: enhancement-type, which require a positive voltage to turn on the device, and depletion-type, which use negative voltage to turn off the device. The IRL3705ZSTR is an enhancement-type MOSFET. This means that it uses positive voltage to turn on the device.

In the presence of a positive voltage, current between the drain and the source terminals begin to flow and the device is said to be “on”. The amount of current flowing from the drain to the source is dependent on the voltage applied to the gate, and is usually referred to as the bias voltage. This voltage varies depending on the application and is controlled by an external circuit.

The most common application for the IRL3705ZSTR is switching circuits, as it can be used to switch large currents with very low on-state resistance. The device is also capable of switching at high frequencies, making it suitable for various motor control circuits. Additionally, the device has built-in over-voltage protection which prevents it from becoming damaged if an excessive voltage is applied.

In terms of its working principle, the IRL3705ZSTR utilizes its gate dielectric layer to control current between its drain and source terminals. When a positive voltage is applied to the gate of the MOSFET, an electric field is generated in the gate dielectric layer. This electric field attracts carriers from the semiconductor, creating an electric potential between the gate and the semiconductor. This potential then creates a conductive channel through which current can flow, thus allowing the MOSFET to switch on and conduct current between the drain and the source.

The IRL3705ZSTR is a highly adaptable MOSFET designed for high-current applications and is often used in motor control, load switching, and lighting control circuits. It has a low on state resistance, making it suitable for long distance switching. Furthermore, the device has built-in over-voltage protection, making it a safe choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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