Allicdata Part #: | IPD60R950C6INTR-ND |
Manufacturer Part#: |
IPD60R950C6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 4.4A TO252 |
More Detail: | N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG... |
DataSheet: | IPD60R950C6 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The IPD60R950C6 is a power MOSFET that features very low on-state resistance, high efficiency, and low gate charge. This device is very suitable for use in applications that require high power conversion such as DC-DC converters, AC adapters, and automotive applications. In this article, we will look more closely at the application fields and the working principle of the IPD60R950C6 Power MOSFET.
The IPD60R950C6 is short for Insulated-Gate Power Bipolar Transistor (IGBT) Mosfet and it is a power MOSFET that is designed for switching applications. It operates by controlling the flow of current between the source and the drain and is suitable for high power conversion applications. Its structure is similar to that of other MOSFETs, with a gate connected to an insulated gate and a source and drain connected to the semiconductor body. The gate voltage is used to control the flow of current between the source and the drain, which allows for the device to be used in switching applications.
The IPD60R950C6 is suitable for applications that require high power conversion. It is commonly used as a switching device in DC-DC converters, AC adapters, and automotive applications. The low on-state resistance and high efficiency of the IPD60R950C6 make it an attractive choice for these types of applications. The low gate charge is also beneficial for these applications, as it reduces the switching time. The IPD60R950C6 is also capable of operating at high frequencies, which makes it suitable for high-speed switching applications.
The working principle of the IPD60R950C6 is relatively simple. When the gate voltage is increased, the current flow is increased between the source and the drain. This increases the voltage across the channel and this, in turn, increases the drain-source current. When the gate voltage is decreased, the current flow is decreased and the drain-source current is lowered.
The IPD60R950C6 is a great choice for applications that require high power conversion. Its low on-state resistance, high efficiency, and low gate charge make it a perfect solution for DC-DC converters, AC adapters, and automotive applications. The working principle of this device is also quite simple and easy to understand, making it a great choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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