IRFR3711ZCTRPBF Allicdata Electronics
Allicdata Part #:

IRFR3711ZCTRPBFCT-ND

Manufacturer Part#:

IRFR3711ZCTRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 93A DPAK
More Detail: N-Channel 20V 93A (Tc) 79W (Tc) Surface Mount D-Pa...
DataSheet: IRFR3711ZCTRPBF datasheetIRFR3711ZCTRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The IRFR3711ZCTRPBF is a single n-channel power MOSFET developed by International Rectifier. It has been designed to be used in a variety of applications, ranging from DC-DC converters and portable power-supply systems to automotive and motor control applications. This device has a relatively low profile, making it suitable for space-limited designs.

The IRFR3711ZCTRPBF is designed to handle currents up to 70A and operate at voltages up to 100V. It features an enhanced RDS(on) (drain to source resistance) which makes it well suited for high power efficiency applications. Additionally, it is specially designed with a low gate charge capability, making it suitable for applications that need very fast switching speeds. The IRFR3711ZCTRPBF has an integrated ESD (electrostatic discharge) diode, which offers added protection against ESD events and helps ensure long-term reliability.

The working principle of the IRFR3711ZCTRPBF is relatively straightforward. When searching for an appropriate power MOSFET, it is important to consider the size of the device, the current loads it must be able to handle, and the operating voltages. In the IRFR3711ZCTRPBF, the gate voltage must be sufficient to turn on the device, allowing the flow of current from the drain to the source. This causes the device to enter a conducting state and allow for current to flow. Once a current is generated, it will be maintained until the voltage across the device changes, at which time the device will switch off.

The IRFR3711ZCTRPBF is ideally suited for a wide variety of applications. Some of the most common uses are in switched mode power supplies, converters and LED drivers. The device is also used in automotive and motor control applications, as well as various reliability-critical industrial applications. With its high switching speed and low gate charge, the IRFR3711ZCTRPBF is well suited for designs with high power efficiency requirements. Thanks to its integrated ESD protection, this device is also ideal for applications that require high levels of safety and reliability.

In conclusion, the IRFR3711ZCTRPBF is a single n-channel power MOSFET developed by International Rectifier for a wide range of applications. It is capable of handling currents up to 70A and operating voltages up to 100V. The device works on a straightforward principle, requiring the gate voltage to be adequate to turn on the device, thereby allowing the flow of current from the drain to the source. This device is well suited for power efficiency applications, as well as automotive and motor control designs. Furthermore, its integrated ESD protection helps ensure long-term reliability in applications with high safety demands.

The specific data is subject to PDF, and the above content is for reference

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