Allicdata Part #: | IRFR3711ZCTRPBFCT-ND |
Manufacturer Part#: |
IRFR3711ZCTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 93A DPAK |
More Detail: | N-Channel 20V 93A (Tc) 79W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3711ZCTRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 93A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2160pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRFR3711ZCTRPBF is a single n-channel power MOSFET developed by International Rectifier. It has been designed to be used in a variety of applications, ranging from DC-DC converters and portable power-supply systems to automotive and motor control applications. This device has a relatively low profile, making it suitable for space-limited designs.
The IRFR3711ZCTRPBF is designed to handle currents up to 70A and operate at voltages up to 100V. It features an enhanced RDS(on) (drain to source resistance) which makes it well suited for high power efficiency applications. Additionally, it is specially designed with a low gate charge capability, making it suitable for applications that need very fast switching speeds. The IRFR3711ZCTRPBF has an integrated ESD (electrostatic discharge) diode, which offers added protection against ESD events and helps ensure long-term reliability.
The working principle of the IRFR3711ZCTRPBF is relatively straightforward. When searching for an appropriate power MOSFET, it is important to consider the size of the device, the current loads it must be able to handle, and the operating voltages. In the IRFR3711ZCTRPBF, the gate voltage must be sufficient to turn on the device, allowing the flow of current from the drain to the source. This causes the device to enter a conducting state and allow for current to flow. Once a current is generated, it will be maintained until the voltage across the device changes, at which time the device will switch off.
The IRFR3711ZCTRPBF is ideally suited for a wide variety of applications. Some of the most common uses are in switched mode power supplies, converters and LED drivers. The device is also used in automotive and motor control applications, as well as various reliability-critical industrial applications. With its high switching speed and low gate charge, the IRFR3711ZCTRPBF is well suited for designs with high power efficiency requirements. Thanks to its integrated ESD protection, this device is also ideal for applications that require high levels of safety and reliability.
In conclusion, the IRFR3711ZCTRPBF is a single n-channel power MOSFET developed by International Rectifier for a wide range of applications. It is capable of handling currents up to 70A and operating voltages up to 100V. The device works on a straightforward principle, requiring the gate voltage to be adequate to turn on the device, thereby allowing the flow of current from the drain to the source. This device is well suited for power efficiency applications, as well as automotive and motor control designs. Furthermore, its integrated ESD protection helps ensure long-term reliability in applications with high safety demands.
The specific data is subject to PDF, and the above content is for reference
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