SPP100N04S2L-03 Allicdata Electronics
Allicdata Part #:

SPP100N04S2L-03-ND

Manufacturer Part#:

SPP100N04S2L-03

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 100A TO-220
More Detail: N-Channel 40V 100A (Tc) 300W (Tc) Through Hole PG-...
DataSheet: SPP100N04S2L-03 datasheetSPP100N04S2L-03 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The SPP100N04S2L-03 is one of the most prevalent MOSFETs on the market today. A MOSFET, also known as a metal oxide semiconductor field-effect transistor, is a type of field-effect transistor that uses a metal oxide semiconductor to control the flow of current. The SPP100N04S2L-03 is a field - effect transistor that has remarkable characteristics for power diffusion and related applications. This article will cover the SPP100N04S2L-03 application field and working principle.

SPP100N04S2L-03 Application Field:

The SPP100N04S2L-03 is designed primarily for power manipulation and related application fields. Such applications include but are not limited to power supplies, switching power converters, automotive systems, DC-DC converters, motor and motor control systems, relay glitching prevention, and automation control systems. This type of MOSFET can also be used in audio or video applications such as operating and sound amplifiers, High-Fidelity (Hi-Fi) audio amplifiers, power amplifiers, and home theatre systems.

The SPP100N04S2L-03 MOSFET is designed especially to meet the demands of higher power ratings and higher efficiency requirements. It is produced in an enhanced version with the most advanced power-related processes and has superior performance than the earlier generations of MOSFETs. The advanced structure and processing of this version provides superior performance and also leads to improved power dissipation capabilities.

SPP100N04S2L-03 Working Principle:

The SPP100N04S2L-03 MOSFET, like all MOSFETs, consists of a metal oxide semiconductor channel sandwiched between two source and drain terminals. When the metal oxide semiconductor channel is switched on, the MOSFET operates in its saturated region. As the voltage changes across its drain and source terminals, the metal oxide channel opens allowing current to flow. Additionally, current flow can also be manipulated by applying a drain to source voltage across the channel.

The enhancement type SPP100N04S2L-03 has an improved structure and additional processing inside the gate-source region that aids in improving the power dissipation rating and increasing the gate-source capacitance. The result is improved performance and higher power handling capability.

The SPP100N04S2L-03 is specially designed for high power applications and can be used in a wide variety of power circuitry such as power converters, automotive systems, DC-DC converters, and motor control systems. It has a maximum drain current rating of approximately 100A @ 25℃ along with a drain to source voltage rating of 100V. It also features an increased power handling capability of +150°C. It is suitable for a wide range of high power applications.

The SPP100N04S2L-03 MOSFET is an ideal choice for a variety of power manipulation applications due to its superior power handling abilities, increased gate to source capacitance, and reduced conduction losses. It is optimized for upgraded performance and increased power efficiency and can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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