IPB100N04S204ATMA1

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The IPB100N04S204ATMA1 is a N-Channel enhancement mode MOSFET transistor manufactured by Infineon Technologies. It is a very useful device that can be used in a variety of applications- both in discrete applications and printed circuit boards. This article will discuss the application field and working principle of this MOSFET transistor.

Application Field

The IPB100N04S204ATMA1 is suitable for high side switching applications. It has high current capabilities and can operate at temperatures of up to 150C. The device has an integrated ESD protection diode and is HBM ESD rated at 1kV. This makes it suitable for consumer, automotive and industrial applications where reliability and performance are a priority.

The device is usually used in motor control and in power management applications. It can be used for controlling the speed and direction of motors, as well as for switching power on and off in power management systems. It is also well suited for switch mode power supply appications, such as the charging of batteries, switching AC line voltage, and controlling the power output of Voltage regulator modules (VRMs).

Working Principle

MOSFETS work on the principle that an electric current is created between source and drain terminals when an electric field is applied between the gate and source. The applied electric field attracts charges, which in turn create a current.

These devices have three terminal, and are composed of four layers. The layers are the source, the drain, a thin conducting semiconductor layer, and the gate. The voltage between the source and drain can control the current flow between the source and drain. When the voltage between the gate and source is high, the current from source to drain is increased, and when it is low, the current is decreased.

Additionally, when a voltage is applied between the gate and source of the transistor, it can turn the device on or off - either blocking or revealing the passage of electric current. This is referred to as the threshold voltage and is usually around 4 Volts.

When the threshold voltage is reached, a large electric current flows from the source to the drain and back towards the source. This electric current is usually in the range of tens to hundreds of Amperes and is tempered by the transistor’s ON-resistance. The electric current creates a magnetic field, which induces a voltage into the electric current and transfers it to the load.

The electric field pulls electrons forward and restores the electric current. At the same time, the electric field repels the electrons, keeping them away from the source. Thus, the electric current is allowed to travel unimpeded.

Schematic symbols are often used to indicate the direction of the current in a circuit diagram. The arrow points towards the drain, whereas the dotted line indicates that the transistors is on and current is flowing from the source to the drain.

In general, the IPB100N04S204ATMA1 is an excellent choice for any high side switching applications. It is highly reliable, can handle very high currents, and is suitable for use in difficult environments. With its integrated ESD protection diode and high HBM ESD rating, it is very robust and suitable for use in a wide variety of applications.

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