IRFR120ZTR Allicdata Electronics
Allicdata Part #:

IRFR120ZTR-ND

Manufacturer Part#:

IRFR120ZTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 8.7A DPAK
More Detail: N-Channel 100V 8.7A (Tc) 35W (Tc) Surface Mount D-...
DataSheet: IRFR120ZTR datasheetIRFR120ZTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR120ZTR is a type of N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) that features a normally-off operation. It’s a type of three-terminal semiconductor switch that’s highly reliable and stable. Specifically, N-channel MOSFETs are used in power electronics and electrical power control applications.

The IRFR120ZTR has an on-resistance rating of 6.7 mΩ and a drain-source breakdown voltage rating of 120 Vds. It has a low threshold voltage (Vgs) of about 2.5V, which in combination with its low on-resistance makes it ideal for energy efficiency and high-speed switching operations. In addition, this MOSFET has a maximum continuous drain current rating of 29 A, which makes it well-suited for a variety of power electronic applications, such as DC-DC converters and DC motor drivers.

The IRFR120ZTR can be used in a variety of different applications, from industrial motor and motor control systems, to power amplifiers and consumer audio/video applications. It can also be used in heating, lighting and ventilation systems. Moreover, this particular MOSFET can be used in power supply switching applications, such as point-of-load converters, and in automotive applications, such as electric power steering.

The IRFR120ZTR works by the same principle as any other MOSFET. It consists of three terminals: the gate, drain and source. When a voltage is applied to the gate, it attracts a thin layer of electrons, or charge carriers, which act as a “gate” through which the current can flow. This changes the resistance between the drain and source, thus allowing current to flow from the drain to the source.

The main advantage of a MOSFET compared to other types of transistors is its extremely low gate to source capacitance. This low capacitance translates into a faster and more efficient switching process. This can be used to enhance the performance of several power electronic applications.

In addition, due to its low on-resistance and high maximum safe operating temperature, the IRFR120ZTR can be used in high-power applications. Furthermore, it features an under-voltage lockout (UVLO) to avoid false operation and an active-high over-voltage protection (OVP) to protect against over-voltage events.

The IRFR120ZTR is an excellent choice for industrial, consumer and automotive applications that require high reliability and stability. It can be used in DC-DC converters, motor drivers, power amplifiers, and point-of-load converters, among other applications. This MOSFET offers a high level of reliability and performance, allowing users to achieve their desired results.

The specific data is subject to PDF, and the above content is for reference

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