
Allicdata Part #: | IRFR120ZTR-ND |
Manufacturer Part#: |
IRFR120ZTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 8.7A DPAK |
More Detail: | N-Channel 100V 8.7A (Tc) 35W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 5.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.7A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFR120ZTR is a type of N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) that features a normally-off operation. It’s a type of three-terminal semiconductor switch that’s highly reliable and stable. Specifically, N-channel MOSFETs are used in power electronics and electrical power control applications.
The IRFR120ZTR has an on-resistance rating of 6.7 mΩ and a drain-source breakdown voltage rating of 120 Vds. It has a low threshold voltage (Vgs) of about 2.5V, which in combination with its low on-resistance makes it ideal for energy efficiency and high-speed switching operations. In addition, this MOSFET has a maximum continuous drain current rating of 29 A, which makes it well-suited for a variety of power electronic applications, such as DC-DC converters and DC motor drivers.
The IRFR120ZTR can be used in a variety of different applications, from industrial motor and motor control systems, to power amplifiers and consumer audio/video applications. It can also be used in heating, lighting and ventilation systems. Moreover, this particular MOSFET can be used in power supply switching applications, such as point-of-load converters, and in automotive applications, such as electric power steering.
The IRFR120ZTR works by the same principle as any other MOSFET. It consists of three terminals: the gate, drain and source. When a voltage is applied to the gate, it attracts a thin layer of electrons, or charge carriers, which act as a “gate” through which the current can flow. This changes the resistance between the drain and source, thus allowing current to flow from the drain to the source.
The main advantage of a MOSFET compared to other types of transistors is its extremely low gate to source capacitance. This low capacitance translates into a faster and more efficient switching process. This can be used to enhance the performance of several power electronic applications.
In addition, due to its low on-resistance and high maximum safe operating temperature, the IRFR120ZTR can be used in high-power applications. Furthermore, it features an under-voltage lockout (UVLO) to avoid false operation and an active-high over-voltage protection (OVP) to protect against over-voltage events.
The IRFR120ZTR is an excellent choice for industrial, consumer and automotive applications that require high reliability and stability. It can be used in DC-DC converters, motor drivers, power amplifiers, and point-of-load converters, among other applications. This MOSFET offers a high level of reliability and performance, allowing users to achieve their desired results.
The specific data is subject to PDF, and the above content is for reference
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