IRF7459PBF Allicdata Electronics
Allicdata Part #:

IRF7459PBF-ND

Manufacturer Part#:

IRF7459PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 12A 8-SOIC
More Detail: N-Channel 20V 12A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7459PBF datasheetIRF7459PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF7459PBF is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) created by International Rectifier. With a low threshold voltage of 4.5Volts and a sizable current limit of 48A, this MOSFET is a very powerful option in a small package. However, its application fields and working principles are very different from most MOSFETs, making it an ideal candidate for certain applications.

Applications

The IRF7459PBF is most often used in the switching of power applications, such as DC motor controllers or power supplies. It is capable of continuously handling very large currents without having to dissipate the large amounts of heat that would typically be caused. It is also used in audio amplifiers to provide a high current capacity, as well as in linear regulators, solenoid controllers, and opto-couplers.

This MOSFET is ideal for use in systems where low voltage operation and close voltage regulation is desired, due to its low threshold voltage. Additionally, IRF7459PBF is built with sophisticated gallium arsenide (GaAs) technology, making it far more reliable than traditional silicon MOSFETs. These features make the IRF7459PBF perfect for high-performance and high-efficiency applications for devices with limited power supplies.

Working Principle

The IRF7459PBF operates on a simple principle of voltage control. In order for it to turn on, the voltage at the gate must be higher than the threshold voltage. When this is achieved, electrons begin to pass through the channel, allowing a current to flow through. As the current flows, it induces a voltage across the drain-source terminals of the device, which increases proportionally with the gate voltage.

On the other hand, when the gate voltage is reduced, the current flowing through the channel will reduce, and ultimately cease when the gate voltage is lower than the threshold voltage. During this process, the drain-source voltage will also decrease in inverse proportion to the gate voltage.

The IRF7459PBF typically allows very little leakage current between the source and drain when it is off. This prevents the device from wasting power, and also eliminates the risk of malfunctions and overheating. It can handle high power levels with ease and can turn on and off quickly while maintaining a low on-resistance.

Conclusion

The IRF7459PBF is a powerful and reliable transistor, suitable for a variety of applications. It is capable of continuously handling very large currents, allows very low voltage operation, and has a small package size. Additionally, it has low on-resistance and fast switching speeds, making it perfect for high performance, power-limited systems.

The specific data is subject to PDF, and the above content is for reference

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