IRFH5250TR2PBF Allicdata Electronics
Allicdata Part #:

IRFH5250TR2PBFCT-ND

Manufacturer Part#:

IRFH5250TR2PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 45A PQFN
More Detail: N-Channel 25V 45A (Ta), 100A (Tc) 3.6W (Ta), 160W ...
DataSheet: IRFH5250TR2PBF datasheetIRFH5250TR2PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Cut Tape (CT) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V
FET Feature: --
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN
Description

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IRFH5250TR2PBF transistors are used in a variety of electronics applications and are becoming increasingly popular as a replacement for other FETs in low frequency signals and power supplies. The IRFH5250TR2PBF is a single N-channel MOSFET transistor. It is part of the IRLF family of devices and is capable of delivering a very high current with low on-resistant. It is a simple, cost-effective device that is used for switching and signal control in a variety of electronic components.The IRFH5250TR2PBF is constructed out of silicon and has an N-channel structure. It consists of two drain and source terminals that are connected to the MOSFET via an insulated gate. The gate voltage controls the flow of current between the source and drain terminals. The voltage between the gate and source determines the conduction of the device; when the gate voltage is positive relative to the source, the transistor is said to be “on”, which indicates that it is conducting current. Conversely, when the gate voltage is negative relative to the source, the transistor is considered “off” and it does not conduct current.The IRFH5250TR2PBF is popular because of its fast switching speed and low voltage threshold. It has a very low on-resistance of only 55 milliohms and can operate at a maximum of 11 volts. This makes it ideal for low voltage applications such as switching power supplies and signal control. Additionally, the device has a very fast switching speed of 18 nanoseconds, which is significantly faster than many other MOSFET transistors.The IRFH5250TR2P BF is an excellent choice for a variety of applications in the consumer electronics, automotive, and industrial industries. It is often used as a replacement for P-channel MOSFETs that have higher on-resistance and slower switching speed. It can be used in a variety of applications such as power supply switching, motor control, and signal amplification. Additionally, the device can also be used in RF applications such as frequency coordinate control.The IRFH5250TR2PBF has become an increasingly popular choice for a variety of reasons. Its low on-resistance and fast switching speed make it ideal for low voltage applications, and its small size makes it ideal for use in compact electronic products. Additionally, its low power consumption and long-term reliability make it a favorite of electronics engineers. Overall, the IRFH5250TR2PBF is a reliable and cost-effective solution for many different applications.

The specific data is subject to PDF, and the above content is for reference

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