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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRFS7434PBF-ND	IRFS7434PBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 324nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10820pF @ 25V Power Dissipation (Max): 294W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
TD425N16KOFHPSA 2-ND	TD425N16KOFHPSA 2	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 471A Current - On State (It (RMS)) (Max): 800A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	2+: $133.302
T1220N20TOFVTXP SA1-ND	T1220N20TOFVTXP SA1	Infineon Technologies	View more Part Status: Last Time Buy Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.8kV Current - On State (It (AV)) (Max): 1220A Current - On State (It (RMS)) (Max): 2625A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz Current - Hold (Ih) (Max): 500mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK	1000 Order	1+: $160.751
TZ800N18KOFB1HP SA2-ND	TZ800N18KOFB1HP SA2	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 819A Current - On State (It (RMS)) (Max): 1500A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz Current - Hold (Ih) (Max): 500mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	1+: $232.754
EVALLEDICL8201F 2-ND	EVALLEDICL8201F 2	Infineon Technologies	View more Series: CoolMOS Part Status: Active Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Current - Output / Channel: 270mA Moisture Sensitivity Level (MSL): 1 (Unlimited) Outputs and Type: 1, Non-Isolated Voltage - Output: 55 V ~ 75 V Voltage - Input: 170 ~ 277 VAC Supplied Contents: Board(s) Utilized IC / Part: ICL8201, IPS65R1K5CE	3 Order	1+: $44.4717
BAS7007E6433HTM A1TR-ND	BAS7007E6433HTM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io) (per Diode): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal = Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4 Base Part Number: BAS70-07	1000 Order	10000+: $0.0508
D2700U45X122XOS A1-ND	D2700U45X122XOS A1	Infineon Technologies	View more Packaging: Tray Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500V Current - Average Rectified (Io): 2900A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 150mA @ 4500V Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: BG-D12026K-1 Operating Temperature - Junction: 140C (Max)	1000 Order	1+: $0.63
IDH02G65C5XKSA2 -ND	IDH02G65C5XKSA2	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	500+: $0.5995
IRFI7440GPBF-ND	IRFI7440GPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 57A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4549pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	4000+: $0.5443
IPA80R460CEXKSA 2-ND	IPA80R460CEXKSA 2	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460 mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 680A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	500+: $1.0068
IPP65R065C7XKSA 1-ND	IPP65R065C7XKSA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V Vgs(th) (Max) @ Id: 4V @ 850A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V Power Dissipation (Max): 171W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	500+: $3.457
EVAL2QR2280G1TO BO1-ND	EVAL2QR2280G1TO BO1	Infineon Technologies	View more Series: CoolSET-Q1 Part Status: Active Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated Power - Output: 20W Voltage - Output: 5V Current - Output: 4A Voltage - Input: 85 ~ 265 VAC Regulator Topology: Flyback Frequency - Switching: 65kHz Board Type: Fully Populated Supplied Contents: Board(s) Utilized IC / Part: ICE2QR2280G-1	2 Order	1+: $40.7673
IRAC1150-D2-ND	IRAC1150-D2	Infineon Technologies	View more Series: PFC Part Status: Obsolete Type: Power Management Function: Power Factor Correction Utilized IC / Part: IR1150S Supplied Contents: Board(s)	1000 Order	1+: $0
IRGP4063DPBF-ND	IRGP4063DPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 144A Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Power - Max: 330W Switching Energy: 625J (on), 1.28mJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25C: 60ns/145ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 115ns Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Base Part Number: IRGP4063D	1 Order	--
IRG4BC30FDPBF-N D	IRG4BC30FDPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 124A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 630J (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25C: 42ns/230ns Test Condition: 480V, 17A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	977 Order	1+: $2.0349 10+: $1.8264 100+: $1.4963 500+: $1.2738 1000+: $1.0743
IRLU8743PBF-ND	IRLU8743PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100A Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4880pF @ 15V Power Dissipation (Max): 135W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	2890 Order	--
BTS282ZE3180AAT MA2TR-ND	BTS282ZE3180AAT MA2	Infineon Technologies	View more Series: TEMPFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 49V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 2V @ 240A Gate Charge (Qg) (Max) @ Vgs: 232nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 300W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-1 Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	1000+: $1.8577
IRG4BC30FPBF-ND	IRG4BC30FPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 124A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230J (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25C: 21ns/200ns Test Condition: 480V, 17A, 23 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	1463 Order	1+: $1.6821 10+: $1.5114 100+: $1.2146 500+: $0.9979 1000+: $0.8268
IPA086N10N3GXKS A1-ND	IPA086N10N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 3.5V @ 75A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V Power Dissipation (Max): 37.5W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	1210 Order	1+: $1.2096 10+: $1.0905 100+: $0.8762 500+: $0.6815 1000+: $0.5647
IRGS30B60KTRRPT R-ND	IRGS30B60KTRRP	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Power - Max: 370W Switching Energy: 350J (on), 825J (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25C: 46ns/185ns Test Condition: 400V, 30A, 10 Ohm, 15V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Base Part Number: IRGS30B60KPBF	1000 Order	--
BCW61AE6327HTSA 1TR-ND	BCW61AE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCW61	1000 Order	45000+: $0.0161
BCX41E6433HTMA1 TR-ND	BCX41E6433HTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 125V Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Power - Max: 330mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCX41	1000 Order	10000+: $0.0377
AUIRGP65A40D0-N D	AUIRGP65A40D0	Infineon Technologies	View more Series: CooliRIGBT Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	1+: $6.5205 10+: $5.8703 100+: $4.8265 500+: $4.0438
BSZ180P03NS3EGA TMA1TR-ND	BSZ180P03NS3EGA TMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta), 39.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.1V @ 48A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 15V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.1687
IPD096N08N3GATM A1TR-ND	IPD096N08N3GATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 3.5V @ 46A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	--
IPB017N10N5LFAT MA1TR-ND	IPB017N10N5LFAT MA1	Infineon Technologies	View more Series: OptiMOS-5 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.1V @ 270A Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V Power Dissipation (Max): 313W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, DPak (6 Leads + Tab)	1000 Order	1000+: $2.7954
TD160N16SOFHPSA 1-ND	TD160N16SOFHPSA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 160A Current - On State (It (RMS)) (Max): 275A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 145mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	24 Order	1+: $28.3311 10+: $26.4335 100+: $22.9512
IRFR4620TRLPBFT R-ND	IRFR4620TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFS4321TRLPBFT R-ND	IRFS4321TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 25V Power Dissipation (Max): 350W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPU80R900P7AKMA 1-ND	IPU80R900P7AKMA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 110A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0.945 10+: $0.8398 100+: $0.6637 500+: $0.5147 1000+: $0.4063
BSZ040N06LS5ATM A1-ND	BSZ040N06LS5ATM A1	Infineon Technologies	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	4 Order	--
SPD03N50C3BTMA1 TR-ND	SPD03N50C3BTMA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 3.9V @ 135A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.4395
IRGPC50F-ND	IRGPC50F	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A Power - Max: 200W Input Type: Standard Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	--
IRLI520N-ND	IRLI520N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	--
IRF3415S-ND	IRF3415S	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF640NL-ND	IRF640NL	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRF7463TR-ND	IRF7463TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF3709ZSTRR-ND	IRF3709ZSTRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRLR4343TR-ND	IRLR4343TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V Power Dissipation (Max): 79W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF2805SPBF-ND	IRF2805SPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--

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