IPB017N10N5LFATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB017N10N5LFATMA1 is a type of N-channel enhancement mode MOSFET (metal–oxide–semiconductor field-effect transistor). It is a kind of three-terminal device, made with a channel of either n-type or p-type. As a channel is required to be of one type mosfet devices are available in both enhancement and depletion modes. The package is leadless and PPAP (product of planned order) is compliant. Part of the PTMA1 series, the IPB017N10N5LFATMA1 is rated for a Drain-Source Voltage of 17 Volts and current of 10 Amps.
Application of IPB017N10N5LFATMA1
This type of transistor is best used in driving applications with high switching speed and high reliability requirements. It can be used in applications where very low on-resistance and high switching speed is required. Applications of this device ranges from power switching, portable electronics and backup systems to industrial automation and automotive electronics.
Almost any kind of power control circuity can benefit from using this MOSFET. Its compact size makes it an ideal choice for applications with limited space. This transitor can also provide protection against overcurrent, overvoltage and reverse voltage. Its fast switching speed makes it suitable for DC-DC converters, rectifiers and other related power applications.
Working Principle of IPB017N10N5LFATMA1
The IPB017N10N5LFATMA1 is based on the principle of action is like a field effect transistor. This type of transistor works by modulating the current that is passing through one channel to an external connection. This is done by applying a small voltage at the gate terminal which will switch the transistor into an ‘on’ or ‘off’ state. When the transistor is in an ‘on’ state, the current flowing through the channel is higher than when it is in an ‘off’ state. This high current flow provides greater circuit efficiency.
Another benefit of using this type of transistor is its low off-state resistance. This resistance is referred to as static drain-source resistance and is the difference in resistance between the on-state and the off-state of the transistor. A lower resistor value indicates better performance and is another reason why this type of transistor is highly suitable for power control applications.
The IPB017N10N5LFATMA1 has a low output capacitance, which is an important parameter for power control applications because it affects the switching speed and efficiency of a MOSFET. The higher the output capacitance, the longer it takes for the transistor to complete its switching operation.
Conclusion
The IPB017N10N5LFATMA1 is a type of N-channel enhancement mode MOSFET that is mainly used in power switching, portable electronics and backup systems to industrial automation and automotive electronics. This type of transistor works on the principle of action is like a field effect transistor where a small voltage is applied at the gate terminal to switch the transistor into an ‘on’ or ‘off’ state. It has a low static drain-source resistance, which is beneficial for power control applications and a low output capacitance, which provides a high switching speed. Although this type of transistor is highly suitable for power control applications, it is important to ensure that all parameters are properly calculated before making a purchase.

The specific data is subject to PDF, and the above content is for reference