IRFS7434PBF

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IRFS7434PBF is a high voltage and high performance N-channel MOSFET with ultra low on-resistance. It was primarily designed for applications where high currents flow through the FET and low levels of on-resistance is essential. The device is capable of operation at a maximum drain-to-source voltage (VDS) of 500 V, drain current (ID) of 17A and pulsed drain current rating (IDM) of 64A. The surface mount leadless (SMD) version of IRFS7434PBF, which is a Package-on-Package (POP) package, also has a drain-to-source breakdown voltage (VDSS) of 500 V, a static drain-to-source on-resistance (RDS(on)) of 0.038 Ohm and a maximum junction temperature (TJ) of 175°C.

IRFS7434PBF belongs to a class of devices known as MOSFETs, metal-oxide-semiconductor field effect transistors, which are an important part of modern semiconductor technology. These are among the most versatile semiconductor devices available, and are used in a wide range of applications. They are also used in power management systems, as they possess the uniquely desirable properties of very low on-resistance, along with the ability to handle high currents.

IRFS7434PBF is specifically designed for conducting and controlling high current, in applications such as switching power supplies and DC to DC converters. It is also used in motor systems and controllers, DC-DC voltage regulators, bridge rectifiers or power amplifiers, as it provides very low on-resistance with excellent state control capability.

The working principle of MOSFETs is based on the idea of an insulated-gate field effect transistor (IGFET). The n-type MOSFET consists of two n-type silicon regions, known as the source and drain, separated by a third region known as the gate. This gate is insulated from the other two regions using an insulating layer of silicon dioxide. The voltage (Vds) applied at the drain and source creates a field in the n-type region, creating a depletion region (or the depletion layer) between the drain and source. As the gate voltage (Vgs) is increased, the depletion region becomes thinner, reducing the resistance between the drain and source.

The drain-to-source on-resistance (RDS(on)) of the MOSFET is largely determined by the geometry of the structure and its doping density. As the RDS(on) is decreased, the power dissipation in the FET declines and its efficiency is improved. The IRFS7434PBF’s drain-to-source on-resistance is 0.038 Ohm, allowing the device to operate with a very low level of power dissipation, making it suitable for applications that require high efficiency.

The temperature coefficient of the RDS(on) has also been designed to be a low figure of 0.5%/°C, which allows the device to operate efficiently even at elevated temperatures. The IRFS7434PBF also features a maximum junction temperature rating of 175°C, making it suitable for operation in demanding temperature-sensitive environments.

In conclusion, IRFS7434PBF is an ideal choice for applications that require low on-resistance and high current handling capability, such as switching power supplies, motor systems, DC-DC voltage regulators, power amplifiers and bridge rectifiers. Its low on-resistance allows for greater efficiency, while its excellent temperature coefficient of RDS(on) ensures good performance even at high temperatures.

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