IRFS4321TRLPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFS4321TRLPBFTR-ND |
Manufacturer Part#: |
IRFS4321TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 83A D2PAK |
More Detail: | N-Channel 150V 85A (Tc) 350W (Tc) Surface Mount D2... |
DataSheet: | IRFS4321TRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 350W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4460pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFS4321TRLPBF is a type of Depletion Mode enhancement MOSFET that is rated 40 amperes and 100 volts. It has good switching performance and avalanche characteristics and is suitable for various lighting and converter applications. This article will explore the application field and working principle of the IRFS4321TRLPBF.
The IRFS4321TRLPBF is designed for use in the following fields: lighting, low-dropout regulators, general purpose analog switch applications, heatsinks and power MOSFETs. It can be used for power switching in converters, ballasts, batteries, photocopiers, LCD monitors, AC adapters, power supplies and DC-DC converters. It is also suitable for load switching, PWM, hammerhead bridge and speaker protection circuits.
The IRFS4321TRLPBF has excellent switching characteristics and is capable of fast switching times. It has a very low on-state drain-source resistance and very low threshold voltage. This makes it ideal for use in high frequency or high voltage applications. The device allows operation at high supply voltages and currents with minimal temperature rises.
As with most MOSFETs, the IRFS4321TRLPBF works in accordance with the Enhancement Mode of operation. This allows for fast switching times and minimal power consumption. In an Enhancement Mode circuit, the gate voltage must be higher than the source voltage in order to turn the device on. When the gate voltage is lowered, the device will turn off. This is known as the ‘turn-off’ mode.
The IRFS4321TRLPBF is a single drain-source type device and is designed to operate in the depletion-mode of operation. This means that the device has the ability to drain current without the application of gate voltage. This is in contrast to the Enhancement Mode of operation, which requires gate voltage in order to turn on the device. The advantage of this mode of operation is that it reduces power dissipation as it does not draw power to turn on the device.
The IRFS4321TRLPBF is a power MOSFET device with an average gate charge of 1.5A and an on-resistance of 0.2Ω. It has an RDS(on) of 0.125Ω and an ID limit of 50A. The device is rated to an operating temperature range of -40°C to +175°C and is designed for use in automotive applications.
In conclusion, the IRFS4321TRLPBF is a power MOSFET device that is rated 40 amperes and 100 volts. It is designed for use in the fields of lighting, low-dropout regulator, general purpose analog switch applications, heatsinks and power MOSFETs. It is capable of fast switching times and low power dissipation and is suitable for use in high frequency and high voltage applications. The device works in accordance with the Depletion Mode of operation and is rated to an operating temperature range of -40°C to +175°C.
The specific data is subject to PDF, and the above content is for reference
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