BTS282ZE3180AATMA2 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BTS282ZE3180AATMA2 is one of the most powerful and versatile transistors – FETs and MOSFETs – available on the market today. It\'s designed to provide an optimum performance in applications such as switching and amplifying sound waves, controlling high voltage systems, or driving high power applications. This device is able to handle loads of up to 20 Watts, and can switch high amounts of current quickly and efficiently. It\'s also reasonably priced, making it an ideal choice for industrial, automotive, and other applications.

The BTS282ZE3180AATMA2 has a single-channel, uni-polar, N-channel, enhancement-type silicon MOSFET. Its maximum drain current is rated at 18A while its package is TO-220FP. To dissipate the heat, it has an exposed drain pad to provide an easy path for heat dissipation. It also has a high-current Gate-source voltage rating of 20V. This device has a low on-state output resistance and can operate with very low gate drive voltages. Furthermore, this transistor has a low gate capacitance and threshold voltage, making it ideal for high-speed switching applications. It also offers superior immunity to electrostatic discharges, making it safe for use in sensitive electronic applications.

The BTS282ZE3180AATMA2 has a wide range of applications. It can be used as a high-frequency switch in digital systems, for instance for switching digital signals with high speed and decay times. It\'s also a great solution for driving motors, relays, and high voltage loads, or for amplifying sound waves as it has an excellent sound-reproduction capability. Additionally, this transistor can also be employed in controlling high voltage switching systems.

The working principle of the BTS282ZE3180AATMA2 is actually quite simple. When the gate moves and opens, the drain of the MOSFET will draw current from the gate terminal, allowing electrons to flow between the drain and the source. This current then drives the load, and the greater the gate voltage, the higher the current that flows through the load, allowing the load to be driven at higher frequencies as well. This transistor can be manipulated easily, allowing a wide range of switching applications.

In conclusion, the BTS282ZE3180AATMA2 is an excellent single-channel, uni-polar, N-channel, enhancement-type silicon MOSFET that is perfect for applications such as switching and amplifying sound waves, controlling high voltage systems, or driving high power loads. Its gate capacitance and threshold voltage are low, enabling high-speed switching, and its wide voltage range, low on-state output resistance, and superior immunity to electrostatic discharges make it a cost-effective and reliable transistor.

The specific data is subject to PDF, and the above content is for reference