IRLI520N Allicdata Electronics
Allicdata Part #:

IRLI520N-ND

Manufacturer Part#:

IRLI520N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 8.1A TO220FP
More Detail: N-Channel 100V 8.1A (Tc) 30W (Tc) Through Hole TO-...
DataSheet: IRLI520N datasheetIRLI520N Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLI520N application field includes automotive, industrial, and consumer electronics. It is an enhancement-type high power MOSFET that can be used in a wide range of applications requiring high current and low voltage. The IRLI520N is commonly used in power supplies, motor control circuits, and in power switching circuits, due to its low on-state resistance (RDSon) and its ability to handle a wide range of currents.

The IRLI520N is built on a monolithic chip and is comprised of an enhancement-mode N-channel MOSFET transistor. The chip has an isolation tab to facilitate easy mounting, as well as an anti-parallel diode built into the package to protect against reverse current flow. The built-in anti-parallel diode also helps to reduce power consumption when the device is in "on" mode.

The IRLI520N working principle is based on the creation and maintenance of an "inversion layer" in the silicon substrate. This inversion layer is created by applying gate voltage to the device, which attracts electrons from the substrate and creates a "charge" or potential barrier between the gate and the source and drain regions. This barrier controls the flow of current and ultimately determines the on/off state of the device. The gate voltage also determines the RDSon of the device, as lower voltages create a smaller inversion layer and higher RDSons, while higher voltages create a larger inversion layer and lower RDSons.

The IRLI520N is also designed to improve layout accessibility and reduce switching losses. It has low gate charge, which enables faster switching, and its internal anti-parallel diode helps to reduce switching loss while also reducing power consumption. The device also features over-voltage protection and the ability to withstand extreme temperatures.

Overall, the IRLI520N is a valuable and versatile MOSFET that can be used in a variety of applications, ranging from consumer electronics to industrial equipment. It is capable of handling large currents and contains built-in protection features to further reduce power consumption and switching losses. Its low on-state resistance and fast switching capabilities make it well-suited for use in power supplies, motor control circuits, and power switching circuits.

The specific data is subject to PDF, and the above content is for reference

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